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Oxide-based transparent RRAM (Resistive Random Access Memory) and preparation method thereof

An oxide and transparent technology, used in electrical components and other directions, can solve the problems of difficult to guarantee process repeatability, low impedance top electrode, high production cost, low investment in equipment and raw materials, and good consistency , low cost effect

Active Publication Date: 2014-01-08
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the preparation of large-area devices, the production cost is high and the process repeatability is difficult to guarantee
[0005] In addition, the problem of the consistency of resistive switching characteristics and the fabrication of low-impedance upper electrodes are problems to be solved

Method used

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  • Oxide-based transparent RRAM (Resistive Random Access Memory) and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] see figure 1 , in this embodiment, the substrate is a glass substrate 1, the material of the lower electrode 2 is FTO (fluorine tin oxide), and the material of the resistive layer film 3 is ZrO 2 , the material of the upper electrode 4 is ITO (indium tin oxide). The basic process steps are as follows:

[0031] 1) Clean the substrate: Use an ultrasonic cleaning machine to clean the glass substrate on which FTO has grown (purchased from Yingkou Opivet New Energy Technology Co., Ltd.). Immerse the glass in acetone, heat the water bath to 50°C, and sonicate for 5 minutes; then immerse the glass in absolute ethanol, heat the water bath to 50°C, and sonicate for 5 minutes.

[0032] 2) Preparation of resistive layer thin film: using sol-gel technology, selecting zirconium n-butoxide (Zr(O 4 h 9 ) 4 ) as a precursor material, acetylacetone (C 5 h 8 o 2 ) as a stabilizer. First, 3.5 mL of zirconium n-butoxide (80 wt% dissolved in n-butanol) was used as a precursor mater...

Embodiment 2

[0036] 1) Cleaning the substrate: Use an ultrasonic cleaner to clean the glass substrate on which FTO has been grown. Immerse the glass in acetone, heat the water bath to 50°C, and sonicate for 7 minutes; then immerse the glass in absolute ethanol, heat the water bath to 50°C, and sonicate for 7 minutes.

[0037] 2) Preparation of resistive layer film: first, 4.0mL zirconium n-butoxide (80wt% dissolved in n-butanol) was used as a precursor material, mixed with 10mL absolute ethanol at room temperature, and stirred. Two minutes later, 2 mL of acetylacetone (C 5 h 8 o 2), the solution was milky white. Add 2.5 mL of acetic acid dropwise and continue to stir, the solution becomes clear and slightly pale yellow. Maintain a rotation speed of 3000 rpm for 60 seconds, and then deposit a thin film on the substrate by spin coating. After the film is fabricated, it is baked on a hot plate at 160° C. for 5 minutes to remove the organic components, and the production of the resistive ...

Embodiment 3

[0041] In this embodiment, the substrate is a glass substrate, the material of the lower electrode 2 is ZTO (zinc tin oxide), and the material of the resistive layer film 3 is ZrO 2 , the material of the upper electrode 4 is ZTO. The basic process steps are as follows:

[0042] 1) Clean the substrate: Use an ultrasonic cleaner to clean the glass substrate that has grown ZTO (prepared by solid-state sintering method). Immerse the glass in acetone, heat the water bath to 60°C, and sonicate for 3 minutes; then immerse the glass in absolute ethanol, heat the water bath to 60°C, and sonicate for 3 minutes.

[0043] 2) Preparation of resistive layer film: 3.0mL zirconium n-butoxide (80wt% dissolved in n-butanol) was used as a precursor material, mixed with 10mL absolute ethanol at room temperature, and stirred. Two minutes later, 2 mL of acetylacetone (C 5 h 8 o 2 ), the solution was milky white. Add 2.0 mL of acetic acid dropwise and continue to stir, the solution becomes cle...

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Abstract

The invention provides an oxide-based transparent resistive random access memory (RRAM), which has a three-layer structure consisting of an upper electrode, a resistive layer film and a lower electrode, wherein the upper electrode is made of a transparent conducting material selected from one of ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide) and ZTO (Zinc-doped Tin Oxide); the resistive layer film is made from ZrO2; the lower electrode is made of a transparent conducting material selected from one of ITO, FTO and ZTO. The invention further provides a method for preparing the RRAM. A sol-gel method is adopted, so that preparation of a low-cost RRAM is realized, and equipment and raw material investments are small; the prepared RRAM device has high consistence, and preparation of a large-area RRAM device can be realized.

Description

technical field [0001] The invention belongs to the field of basic electrical components, and in particular relates to a resistive memory device and a preparation method thereof. Background technique [0002] Transparent solid-state electronic devices have promising applications in transparent displays, electronic paper, and other large-area transparent electronic systems. As an important part of an electronic system, it is difficult to realize cost-effective transparent memory devices through traditional memory manufacturing processes. Oxide-based resistive random access memory (RRAM, Resistive Random Access Memory) is a rewritable memory device with remarkable durability and data transmission speed. It has excellent device characteristics and storage functions, so it has great potential in transparent electronic device applications Great prospects. [0003] Traditional transparent oxide films can be realized by sputtering (such as patent CN102623569A), chemical vapor dep...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 刘力锋王逸然韩德栋王漪刘晓彦康晋锋
Owner PEKING UNIV
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