Thin-film transistor, and preparation method, array substrate and display thereof

Abstract

The embodiment of the invention provides a thin-film transistor, and a preparation method, an array substrate and a display thereof, relating to the field of displaying technology and capable of reducing the current leakage and ensuring the performance reliability of the thin-film transistor while maintaining the high on-state current of the thin-film transistor. The thin-film transistor comprises a grid electrode, a grid insulating layer, an active layer, a source electrode and a drain electrode, wherein the active layer comprises a first active layer and a second active layer, the first active layer is arranged at one side close to the grid insulating layer, the second active layer is arranged at one side close to the source electrode and the drain electrode; the charge carrier mobility of the first active layer is higher than that of the second active layer. The invention provides the production method of the thin-film transistor capable of reducing the current leakage of the thin-film transistor while needing to maintain the high on-state current of the thin-film transistor, and a production method of the array substrate and the display of the thin-film transistor.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof, an array substrate and a display. Background technique [0002] At present, as the size of the display continues to increase, the frequency of the driving circuit continues to increase, and a thin film transistor with higher carrier mobility is required as a switch of the pixel unit in the display. The traditional thin film transistor (TFT) uses amorphous silicon material as the active layer, and its carrier mobility is only 0.5cm 2 / V·s, for a large-scale display with a size of more than 80 inches, its driving frequency reaches 120Hz, correspondingly, the active layer of the thin film transistor needs to have a thickness of 1.0cm 2 / V·s above carrier mobility, obviously, the carrier mobility of amorphous silicon TFT is difficult to meet the driving needs of large-size displays. Therefore, people turn their research atte...

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Problems solved by technology

[0003] However, since the carrier mobility of the zinc oxide oxynitride (ZnON) active layer is more than 200 times that of the traditional amorphous silicon active layer, excessive carrier mobility will lead to leakage current of the TFT increase, affect the working characteristics of TFT, reduce the reliability of the TFT array substrate, and thus affect the display quality of the display

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