Horizontal high-voltage super junction power semiconductor device

Abstract

The invention relates to a power semiconductor technique, in particular to a charge-compensation horizontal high-voltage super junction power semiconductor device. According to the horizontal high-voltage super junction power semiconductor device, the surface of a P type substrate layer is covered by an N type charge compensation layer. The N type charge compensation layer comprises various doping method of uniform doping, linear doping, disperse doping and the like. The linear doping can obviously reduce the auxiliary exhaust function of a substrate. The horizontal high-voltage super junction power semiconductor device has the advantages of using an injection selection function to adjust the doping concentration based on the linear doping to obtain an optimized doping method, fully takes ideal substrate conditions and charge balance conditions of equivalent substrates into consideration, well overcomes the effects of the auxiliary exhaust functions of substrates and enables a super junction LDMOS to achieve the optimal pressure resistance. The horizontal high-voltage super junction power semiconductor device is especially applied to the field of horizontal high-voltage super junction power semiconductor devices.

Description

technical field [0001] The invention relates to power semiconductor technology, in particular to a charge-compensated lateral high-voltage super-junction power semiconductor device. Background technique [0002] With the rapid development of semiconductor technology, power MOSFET devices have been widely used for their advantages such as low driving power, fast switching speed, no secondary breakdown, negative temperature coefficient and good thermal stability. But in high-voltage applications, the specific on-resistance R of conventional power MOSFETs on，sp (Specific On-resistance) increases with the 2.5th power of the breakdown voltage BV (Breakdown Voltage), which hinders the development of devices. The proposal of the Super Junction SJ (Super Junction) structure breaks the theoretical limit of the traditional MOSFET, and has a lower conduction loss while maintaining all the advantages of the power MOS. [0003] The lateral double-diffused metal oxide semiconductor LDMO...

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Problems solved by technology

[0006] In order to solve the problem of N / P charge imbalance in lateral superjunction devices caused by the substrate-assisted depletion effect, the present invention proposes a charge-compensated lateral high-voltage power semiconductor device, which introduces an N-type substrate between the P-type substrate layer and the superjunction layer. For the charge compensation layer, the compensation layer and the P-type substrate are regarded as the effective substrate to establish a model. When making a one-dimensional approximation to the boundary of the depletion region of the LDMOS substrate, the optimal doping method of the charge compensation layer is linear doping. Considering In actual conditions, on the basis of linear doping, the doping concentration is adjusted by using the implant selection function to obtain the optimal doping method of the charge compensation layer

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