Preparation method of cyanate ester resin thin film as well as reaction equipment thereof
A technology of cyanate resin and reaction equipment, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of insufficient catalytic selectivity, difficult to stabilize curing process, adverse effect on dielectric properties, etc. , to achieve the effect of no environmental pollution, easy to implement, and solve the difficulty of feeding
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[0028] A preparation method of cyanate ester resin ultra-thin film, wherein:
[0029] The substrate 14 is a heavily doped p-type silicon wafer;
[0030] The molecular structure of monomer 8 is:
[0031] .
[0032] The preparation process is:
[0033] (1) Substrate pretreatment: Place the substrate 14 on the lower electrode 15 in the pulse plasma main reaction chamber 1, and use the mechanical pump 17 to pump the gas in the main reaction chamber 1 to the main reaction chamber measured by the vacuum gauge 12 The pressure of 1 reaches 2Pa; then high-purity argon is introduced into the main reaction chamber 1 through the argon cylinder 11, until the pressure reaches 80Pa; repeat the above-mentioned gas extraction three times, adjust the pressure of the main reaction chamber 1 to 20Pa, and set the discharge power to 80W. Under the conditions, the substrate was cleaned with argon plasma for 3 minutes.
[0034] (2) Monomer pretreatment and introduction: After the monomer 8 is placed on the m...
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