Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Microstructural plasma device based on printed circuit board process

A technology of printed circuit boards and ionic devices, applied in the direction of plasma, electrical components, etc., to achieve the effect of less process links, easy production and production, and easy production

Inactive Publication Date: 2013-12-11
HENAN POLYTECHNIC UNIV
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of making microstructure devices in the past is that high-precision processing instruments and advanced technology are required for support.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microstructural plasma device based on printed circuit board process
  • Microstructural plasma device based on printed circuit board process
  • Microstructural plasma device based on printed circuit board process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be described in further detail below.

[0023] The microcavity of the device is composed of an upper electrode, an intermediate dielectric layer and a lower electrode, and each unit of the device is driven by the upper and lower electrodes. Based on insulating dielectric epoxy resin material, two layers of copper foil are made on the upper and lower surfaces of the substrate, and a certain safety distance is left between the edge of the copper foil and the edge of the substrate. Cylindrical microcavity half-through holes (just passing through the upper electrode but not through the intermediate dielectric layer and the lower electrode) units are arranged in an array, and the distance between rows in the array is not less than the distance between columns. The upper and lower layers of copper foil separated by the bottom plate are used as the upper and lower electrodes, and the two electrodes are respectively led out to the connecting terminals...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a microstructural plasma device based on a printed circuit board process. A microcavity of the device is composed of an upper electrode, a middle medium layer and a lower electrode. Each unit of the device is driven by the upper electrode and the lower electrode. A substrate is made of insulating medium epoxy resin materials. Two layers of copper foil are manufactured on the upper surface and the lower surface of the substrate. Certain safe distances are reserved between the edges of the layers of copper foil and the edge of the substrate. The cylindrical microcavity semi-through hole units are arranged in an array mode. Microcavity semi-through holes just penetrate through the upper electrode and do not penetrate through the middle medium layer and the lower electrode. In the array, the distances between rows are not smaller than those between columns. The two layers of copper foil which are separated by the substrate are used as the upper electrode and the lower electrode, the two electrodes are respectively led out of amphenol connectors, and the coplanar-type microstructural plasma device based on the printed circuit board process is obtained.

Description

technical field [0001] The invention relates to a microstructure plasma device based on printed circuit board technology. Background technique [0002] In recent years, as a new type of low-temperature plasma source, micro-discharge plasma has become a hot research topic in the field of low-temperature plasma due to its wide application prospects and the great possibility of opening up many emerging low-temperature plasma basic research fields. one. [0003] The so-called microstructure discharge plasma refers to the plasma whose spatial characteristic scale is limited to the range of submillimeter to micron. It usually results from the miniaturization of conventional plasma devices. Although it is developed from conventional plasma, microdischarge plasma can usually operate under atmospheric pressure because the size of the discharge is reduced to the order of millimeters or even lower. Compared with conventional plasmas, there are some new changes, such as higher plasma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/24
Inventor 孙岩洲赵来军张展韦延方卫林林巩银苗
Owner HENAN POLYTECHNIC UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products