Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Two-sided passivation efficient heterojunction battery and manufacturing method thereof

A heterojunction cell and double-sided passivation technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex manufacturing process, high equipment requirements, and difficulty in mass production, so as to improve the internal reflection of the back , improve short-circuit current, increase the effect of repeated use

Inactive Publication Date: 2013-11-06
GD SOLAR
View PDF4 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

They all use high-quality silicon substrates, perfect surface light-trapping structures, excellent surface passivation technology, and unique cell structures. The production process is very complicated and requires high equipment, so it is difficult to mass produce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-sided passivation efficient heterojunction battery and manufacturing method thereof
  • Two-sided passivation efficient heterojunction battery and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The present invention will be further described below in conjunction with the examples, but not as a limitation of the present invention.

[0014] See figure 1 The double-sided passivated high-efficiency heterojunction cell includes a crystalline silicon base layer 1, an amorphous n layer 2, a positive passivation layer 3 and a positive electrode 7 are arranged on the front surface of the crystalline silicon base layer 1 in sequence, and the amorphous n layer 2 and the crystalline silicon base layer 1 A solar PN junction is formed, and the rear surface of the crystalline silicon base layer 1 is provided with a back passivation layer 4 , an intrinsic hydrogenated silicon film 5 , a heavily doped hydrogenated silicon film 6 , a transparent conductive film TCO8 and a back electrode 9 . The positive passivation layer 3 and the back passivation layer 4 can be a single-layer passivation film structure or a double-layer passivation film structure. For a single-layer passivati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a two-sided passivation efficient heterojunction battery which comprises a crystalline silicon substrate. An amorphous n layer, a positive passivation layer and a positive electrode are sequentially arranged on the front surface of the crystalline silicon substrate. The amorphous n layer and the crystalline silicon substrate form a solar PN junction. A back passivation layer, an intrinsic silicon hydride thin film, a heavy doping silicon hydride thin film, a transparent conducting film TCO and a back electrode are sequentially arranged on the rear surface of the crystalline silicon substrate. The invention further discloses a manufacturing method of the two-sided passivation efficient heterojunction battery. The two-sided passivation efficient heterojunction battery combines common advantages of a traditional crystalline silicon battery and a thin-film battery, lowers the load on the back surface, increases open circuit voltage, enhances long wave absorption, increases short circuit currents, and can realize over 20% of photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a heterojunction solar cell and a manufacturing method thereof, in particular to a double-sided passivated high-efficiency heterojunction cell and a manufacturing method thereof, and belongs to the technical field of solar cell manufacturing. Background technique [0002] The current commercial solar cell production process is simple, the manufacturing cost is relatively low, and it is suitable for industrialization and automation, so it is widely used. However, this process also has certain disadvantages, mainly because the technology is relatively simple and the conversion efficiency of solar cells is relatively low. [0003] Compared with traditional technology, major research institutions around the world have developed a series of high-efficiency crystalline silicon solar cells with conversion efficiency exceeding 20%, such as PERL cells, PERC cells, PERT cells, OECO cells, LFC cells, MWT cells, EWT cells, etc. They all u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0747H01L31/0216H01L31/18H01L31/20
CPCY02E10/50Y02P70/50
Inventor 赵会娟张东升
Owner GD SOLAR
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com