FinFET structure and manufacturing method thereof

Abstract

The invention provides a FinFET structure and a manufacturing method of the FinFET structure. According to the manufacturing method of the FinFET structure, a fin-shaped channel region shaped like a triangular prism is adopted to replace a fin-shaped channel region shaped like a cuboid, two protruding faces of the FinFET structure form opposite crystal face crystal orientation structures, the scattering effect of carriers is reduced, the charge storage capacity is improved, the structure that the fin-shaped channel region is used up is formed more easily when the FinFET structure is controlled by a grid electrode, the conductive path of channels is thoroughly cut off, and therefore the driving current of an FinFET element is improved. The FinFET structure and the manufacturing method of the FinFET structure are suitable for manufacturing the FinFET element of smaller size and with higher drive current.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a FinFET structure and a manufacturing method thereof. Background technique [0002] MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the main component of most semiconductor devices. When the channel length is less than 100nm, in the traditional MOSFET, due to the semiconductor material of the semiconductor substrate surrounding the active region, the source and drain regions Interaction, the distance between the drain and the source is also shortened, resulting in a short channel effect, so that the control ability of the gate to the channel becomes worse, and it becomes more and more difficult for the gate voltage to pinch off the channel The larger the value, the easier it is for the subthrehhold leakage phenomenon to occur. [0003] Fin field effect transistor (Fin Field effect transistor, FinFET) is a new metal oxide semiconductor field effect transi...

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Problems solved by technology

[0005] As the semiconductor industry advances to the 22nm technology node, the manufactured FinFET devices are required to have smaller size and higher drive current, although in the existing technology, LDD can be made by such as pre-amorphization implantation (PAI) technology, stress introduction technology, etc. and Halo implantation to form a shallower FinFET device ultra-shallow junction (USJ), improve the short channel effect (SCE), and increase the driving current of the FinFET device, but the structure of the FinFET device in the prior art, especially the fin-shaped channel The structure of region 13 limits the improvement of the performance of FinFET devices, and can no longer meet the requirements of manufacturing FinFET devices with smaller size and higher drive current

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