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Glazing process of semiconductive glaze and semiconductive glaze used by glazing process

A kind of semi-conductive and high-tech technology, applied in the field of semi-conductive glaze, can solve the problems of high partial discharge index, large insulation resistance value, uneven distribution of electric field, etc., and achieve the effect of balancing electric field, reducing resistance and eliminating partial discharge

Inactive Publication Date: 2013-10-23
湖南省醴陵市浦口电瓷有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a semi-conductive glaze glazing process. The semi-conductive glaze prepared by this process can not only overcome the original extremely uneven electric field distribution near the flange , The surface insulation resistance of the porcelain sleeve is too large, and the local discharge index is high, and it can improve the mechanical strength and anti-pollution flashover ability, and prolong the service life. At the same time, it improves the corrosion resistance and arc resistance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A semi-conductive glaze, its components and the mass parts of each component are as follows:

[0016] Feldspar powder: 20 parts; Quartz powder: 20 parts;

[0017] Calcite: 2 parts; Kuancheng soil: 8 parts;

[0018] TiO 2 : 3 parts; Fe 2 o 3 : 15 parts; Cr 2 o 3 : 1.5 servings.

[0019] A kind of glazing process of semi-conductive glaze, the steps of this process are as follows:

[0020] a) According to the above components of the semi-conductive glaze and the mass parts of each component, prepare materials:

[0021] b) According to the material: ball: water = 1: 1.5: 0.5, wet ball milling for about 26 hours;

[0022] c) The glaze after ball milling is passed through a 320-mesh sieve, and the sieve residue is controlled within the range of 0.02-0.05, and then adjusted into a semi-conductive glaze slurry of 50-70 Baume degrees for later use;

[0023] d) Cover the semi-conductive glaze blank with adhesive tape from the flange glued part to the nearest umbrella l...

Embodiment 2

[0030] A semi-conductive glaze, its components and the mass parts of each component are as follows:

[0031] Feldspar powder: 30 parts; Quartz powder: 30 parts;

[0032] Calcite: 6 parts; Kuancheng soil: 15 parts;

[0033] TiO 2 : 6 parts; Fe 2 o 3 : 20 parts; Cr 2 o 3 : 4.5 servings.

[0034] A kind of glazing process of semi-conductive glaze, the steps of this process are as follows:

[0035] a) According to the above components of the semi-conductive glaze and the mass parts of each component, prepare materials:

[0036] b) According to the material: ball: water = 1.5: 2: 1, wet ball milling for about 29 hours;

[0037] c) The glaze after ball milling is passed through a 320-mesh sieve, and the sieve residue is controlled within the range of 0.02-0.05, and then adjusted into a semi-conductive glaze slurry of 50-70 Baume degrees for later use;

[0038] d) Cover the semi-conductive glaze blank with adhesive tape from the flange glued part to the nearest umbrella lo...

Embodiment 3

[0045] A semi-conductive glaze, its components and the mass parts of each component are as follows:

[0046] Feldspar powder: 28 parts; Quartz powder: 27 parts;

[0047] Calcite: 3 parts; Kuancheng soil: 12 parts;

[0048] TiO2: 5 parts; Fe2O3: 17 parts; Cr2O3: 3 parts.

[0049] A kind of glazing process of semi-conductive glaze, the steps of this process are as follows:

[0050] a) According to the above components of the semi-conductive glaze and the mass parts of each component, prepare materials:

[0051] b) According to the material: ball: water = 1.5: 1.5: 0.5, wet ball milling for about 27 hours;

[0052] c) The glaze after ball milling is passed through a 320-mesh sieve, and the sieve residue is controlled within the range of 0.02-0.05, and then adjusted into a semi-conductive glaze slurry of 50-70 Baume degrees for later use;

[0053] d) Cover the semi-conductive glaze blank with adhesive tape from the flange glued part to the nearest umbrella lower edge, and then u...

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Abstract

The invention discloses a glazing process of a semiconductive glaze and the semiconductive glaze used by the glazing process. The process comprises the following steps of: preparing the following components in parts by mass: 20 parts to 30 parts of feldspar powder, 20 parts to 30 parts of quartz powder, 2 parts to 6 parts of calcite, 8 parts to 15 parts of KuanCheng soil, 3 parts to 6 parts of TiO2, 15 parts to 20 parts of Fe2O3 and 1.5 parts to 4.5 parts of Cr2O3 to prepare the semiconductive glaze; cementing a flange plate of a semiconductive glaze blank to the lower edge of the closest umbrella to be covered by a rubber belt, and then spraying a layer of common glaze on the blank by a glaze spraying machine; then taking off the rubber belt and spraying a layer of semiconductive glaze slip on the covered position of the rubber belt; and spraying sand on the cemented position of the flange plate. By utilizing the semiconductive glaze prepared by the process, the original problems of uneven electric field distribution near the flange plate, too large insulation resistance value of porcelain sleeve surface and high local electric discharge index can be overcome.

Description

technical field [0001] The invention relates to a semiconductive glaze glazing process and the semiconductive glaze used therein. Background technique [0002] At present, the insulator semi-conductive glaze is a kind of highly dispersed semiconductor crystal phase, and forms a semi-conductive crystal phase to build a glazed glass that carries current in the movement channel. It is a special glass-ceramic composed of semiconductor crystal grains and insulating matrix glass. , its semiconducting performance is very important, which is manifested in the high dispersion of semiconductor crystal phase, and the crystallinity should account for a certain volume fraction in the glaze, effectively establishing a channel for the smooth passage of current. The semi-conductive glazes in the prior art are actually between conduction and insulation, and some conduction resistances are relatively high, and the glaze surface is rough and dull. With the rapid development of electric power,...

Claims

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Application Information

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IPC IPC(8): C04B41/86C04B41/89
Inventor 陈圣明杨成波佟军赵红军冯智慧罗恩泽吴佶陈瑾胡亮
Owner 湖南省醴陵市浦口电瓷有限公司
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