Photoresist reworking etching process

Abstract

The invention relates to the technical field of integrated circuits, and in particular relates to a photoresist reworking etching process. According to the photoresist reworking etching process disclosed by the invention, in an etching process manufacturing procedure, a photoresist needing to be reworked and a non-nitrogen bottom anti-reflecting layer are sequentially removed, a new non-nitrogen bottom anti-reflecting layer is re-deposited, and the photoresist is continuously coated for performing a subsequent photoetching process so as to complete a photoresist reworking process. Therefore, during the photoetching process, preparation of a protection layer on the non-nitrogen bottom anti-reflecting layer for preventing optical parameters or surface properties of the non-nitrogen bottom anti-reflecting layer from being influenced during subsequent photoetching reworking is eliminated, so that the flow of the whole photoetching process is simplified; meanwhile, by the adoption of the photoresist reworking etching process, the accuracy of a product subjected to photoresist reworking in a subsequent photoetching process remains unchanged, and the performance and yield of the product are further improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a photolithography rework etching process. Background technique [0002] In the traditional integrated circuit manufacturing process, the material of the bottom anti-reflective layer (DARC Layer) used is SiON, but because SiON containing N will directly cause poisoning of the photoresist (PR) coated subsequently, the so-called The footing effect (PR footing), which in turn affects the precision of the photolithography process; in order to eliminate the above-mentioned footing effect, a layer of oxide cap layer (oxide cap layer) is generally grown on the surface of the bottom anti-reflection layer made of SiON ), to reduce the effect of N on the photoresist. [0003] At present, with the development of integrated circuit process technology, advanced patterning film (APF for short) will be involved in the lithography process at the technology node of 45nm and below; f...

AI Technical Summary

Problems solved by technology

However, although the oxide capping film 15 can well resist the damage to the non-nitrogen bottom anti-reflective film in the wet stripping or dry stripping, it is not compatible with the development of the non-nitrogen bottom anti-reflective layer (N-Free DARC) Contrary to the original intention, but also increased the complexity of the process

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