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Electromodulation MEMS infrared source and fabrication method thereof

An infrared light source and electrical modulation technology, applied in the infrared field, can solve the problems of complex film resistor manufacturing process, retention, unsatisfactory device performance and yield rate, etc., and achieve the effects of stable working performance, low cost and high duty cycle

Inactive Publication Date: 2013-10-02
NANJING MOMANSI ELECTRONICS TECH
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  • Description
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Problems solved by technology

The development of micro-radiation sources has also been carried out in China, such as the direct use of silicon bridges as heating resistors, or the array structure of thin-film resistors, but due to the limitations of the silicon material itself and the complexity of the manufacturing process of thin-film resistors, the performance and yield of the device not ideal
Although many countries have done a lot of research on the MEMS of electrically modulated infrared radiation sources, they are still in the state of laboratory research, and there are still many gaps in technology to be studied urgently. As for the final commercialization of devices, a lot of work is still needed.

Method used

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  • Electromodulation MEMS infrared source and fabrication method thereof
  • Electromodulation MEMS infrared source and fabrication method thereof
  • Electromodulation MEMS infrared source and fabrication method thereof

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Embodiment Construction

[0041] In order to make the object, technical solution and advantages of the present invention clearer, various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in each claim of the present application can be realized.

[0042] The first embodiment of the present invention relates to an electrically modulated MEMS infrared light source, which includes a substrate, a supporting film layer, and a heating electrode; wherein, the supporting film layer covers the substrate, and the connection between the substrate and the supporting film layer ado...

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Abstract

The invention relates to the technical field of infrared and discloses an electromodulation MEMS (Micro-electro-mechanical Systems) infrared source and fabrication method thereof. According to the infrared source and the method, a four-side fixed support structure is adopted, heating electrodes fixed on a support film are used for generating external infrared radiation energy, so that the electromodulation MEMS infrared source is secure in structure, stable in working performance, and high in duty ratio, a fabrication technology is simple, the cost is low, and massive production with low cost is realized.

Description

technical field [0001] The invention relates to the field of infrared technology, in particular to an electrically modulated microelectromechanical system (MEMS) infrared light source and a preparation method thereof. Background technique [0002] Infrared sensing technology is an important field of technological research in the 21st century. At present, infrared sensing technology has been widely used in pollution monitoring and detection, temperature monitoring, space monitoring, high-resolution imaging, medicine and other fields. Moreover, due to the good selectivity and extremely low false alarm of infrared gas sensing technology, infrared sensing method has been widely used in gas analysis. In addition, due to the introduction of some new technologies and materials, the miniaturization of infrared sensing instruments and even Micro-Electro-Mechanical Systems (Micro-Electro-Mechanical Systems, “MEMS” for short) has become a development trend. [0003] In infrared sensin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81C1/00
Inventor 纪新明黄宜平吴东平
Owner NANJING MOMANSI ELECTRONICS TECH
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