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Cooling method for processing indoor parts

A cooling method and a technology of a processing chamber, which are applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of lower heat transfer efficiency of the mounting table, poor return on investment, and rising costs, and achieve the goal of suppressing the transfer efficiency Effect of lowering, rapid cooling, and suppression of rise in atmospheric temperature

Active Publication Date: 2018-05-29
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in the method of transferring the heat of the mounting table to the introduced air, since the temperature of the introduced air rises due to the heat transfer over time, the heat transfer efficiency of the mounting table decreases and the temperature of the mounting table decreases. cooling takes a long time
[0010] In order to promote the cooling of the mounting table, it is conceivable to form a refrigerant passage inside the mounting table, but this will complicate the structure of the substrate processing apparatus and increase the cost.
In particular, since the frequency of maintenance is not so high, if the refrigerant passage is only formed for cooling before maintenance, the return on investment is poor

Method used

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  • Cooling method for processing indoor parts
  • Cooling method for processing indoor parts
  • Cooling method for processing indoor parts

Examples

Experimental program
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Effect test

Embodiment

[0076] First, when the dry etching process is performed in the substrate processing apparatus 10, the stage 12 is heated to 260° C. by the heater 16, and then the image 3 In the cooling treatment of the mounting table, the cooling time of the mounting table 12 to 60° C. was measured, and it was found that only 16 hours were needed (Example). In addition, in the Example, the opening amount L of the opening part 11d was set to 45 mm.

[0077] On the other hand, similarly to the embodiment, in the substrate processing apparatus 10, the stage 12 is heated to 260° C. by the heater 16, and after that, the atmosphere is introduced into the chamber 11, and the chamber 11 is not exhausted. The chamber 11 was placed in the air without separating the lid portion 11b from the base portion 11a, and the cooling time for the mounting table 12 to 60° C. was measured, and it was found that it took 48 hours (comparative example).

[0078] Therefore, it can be seen that compared with the case ...

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Abstract

The present invention provides a cooling method for components in a processing chamber that can quickly cool components in the processing chamber without complicating the structure of a substrate processing apparatus. In a substrate processing apparatus (10) for dry etching a substrate (G), a mounting table disposed in a chamber (11) composed of a base portion (11a) and a lid portion (11b) that can be separated from each other (12) When cooling, adjust the pressure in the chamber (11) to atmospheric pressure, separate the cover (11b) and the base (11a), and form an open portion around the entire circumference of the side wall of the chamber (11). (11d), thereby connecting the chamber (11) to the atmosphere, using the exhaust system (14) to form airflow in the chamber (11), and when it is determined that the temperature of the mounting table (12) is below 60°C , stop the work of the exhaust system (14) and stop the air flow in the chamber (11).

Description

technical field [0001] The invention relates to a cooling method for processing indoor parts. Background technique [0002] In a substrate processing apparatus that performs desired plasma processing, such as dry etching, on a substrate, the substrate is placed on a stage arranged in a depressurized chamber (processing chamber) and the substrate is exposed. In the plasma generated within the chamber by the process gas. Therefore, during the plasma processing, the temperature of the substrate rises due to heat from the plasma, and the temperature of the mounting table on which the substrate is placed also rises due to direct input of heat from the plasma or transfer of heat from the substrate. [0003] In addition, in recent years, a method of subjecting a substrate to a high temperature and performing plasma processing has been developed. In response to this, a heater is built in the mounting table and the mounting table is heated to 260° C. with the heater. [0004] In ad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCH01L21/02315H01L21/0234H01L21/0273H01L21/30621H01L21/3065H01L21/31116H01L21/67011H01L21/67248H01L21/67253H01L21/76825H01L21/76826
Inventor 田中诚治志村昭彦
Owner TOKYO ELECTRON LTD
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