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Method and device for producing thermoelectric conversion material and method for producing sputtering target

A technology of thermoelectric conversion materials and sputtering targets, which is applied in the direction of thermoelectric device node lead wire materials, sputtering plating, metal material coating technology, etc., can solve the problem of high cost, difficult to uniformly distribute doped elements, crystal defects etc.

Active Publication Date: 2016-03-02
PIONEER MATERIALS INC CHENGDU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The materials used in the prior art usually use the traditional long single crystal method to produce this alloy, which is expensive, and sometimes when manufacturing this semiconductor material, it is necessary to dope other elements to adjust the concentration of the electric carrier
This traditional production method is difficult to achieve a uniform distribution of doping elements
Doped elements can produce segregation, or crystal defects

Method used

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  • Method and device for producing thermoelectric conversion material and method for producing sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] First put bismuth (Bi), 57.7% tellurium (Te) and 27.3% antimony (Sb) with a weight ratio of 15.0% into the same crucible; the crucible is usually made of quartz or zirconia and other materials; this The composition of these components forms Bi 0.5 Sb 1.5 Te 3 metal compound.

[0039] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0040] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. During the heating process and the reaction process under high temperature conditions, vacuum is not applied.

[0041] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 590°C to 610°C, the heating rate is controlled at 90°C / hour to 100°C / ...

Embodiment 2

[0044] First, 0% bismuth (Bi), 40% antimony (Sb) and 60% tellurium (Te) are put into the same crucible according to the weight ratio; the crucible is usually made of materials such as quartz or zirconia.

[0045] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0046] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. Vacuum was not applied during heating and during high temperature reactions.

[0047] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 630°C to 650°C, the heating rate is controlled at 90°C / hour to 100°C / hour. Keep at this temperature for 165 minutes to 185 minutes.

[0048] Let the raw materials in the crucible full...

Embodiment 3

[0050]First, 15% bismuth (Bi), 60% tellurium (Te) and 25% antimony (Sb) are put into the same crucible according to the weight ratio; the crucible is usually made of materials such as quartz or zirconia.

[0051] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0052] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. During heating and high temperature reaction, no vacuum is applied.

[0053] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 630°C to 640°C, the heating rate is controlled at 80°C / hour to 100°C / hour. Keep at this temperature for 180 minutes to 195 minutes.

[0054] Let the raw materials in the crucible fully react u...

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Abstract

The present invention relates to the field of semiconductor materials, and specifically, to methods and devices for producing thermoelectric conversion materials and methods for producing sputtering targets using the materials. A method for producing thermoelectric conversion materials includes the following steps: (A) Mixing 0%-15% bismuth, 25%-40% antimony and 56%-63% tellurium to form raw materials; (B) Mixing the raw materials A vacuum melting process is performed to obtain the semiconductor thermoelectric conversion material BiSbTe metal compound. The present invention uses a vacuum smelting method to uniformly dope the traditional bismuth telluride material with the metalloid element antimony (Sb) in the metal alloy of bismuth telluride to form a metal compound BiSbTe, changing the material. The energy band gap thereby increases the concentration of electric carrier free holes in the semiconductor alloy and greatly improves the thermal-electrical properties of the material itself, the so-called ZT parameter. The doped elements will not produce segregation or crystal defects.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for producing a thermoelectric conversion material, and also relates to a device for producing a thermoelectric conversion material and a method for producing a sputtering target with the material. Background technique [0002] Thermal-to-electrical conversion, as a new energy generation method, is a new technology application field that has only been developed in recent years. It is a kind of temperature difference, which causes the concentration of electric carriers in the material to appear gradient under the temperature difference, so that the diffusion of electric carriers occurs, resulting in the generation of electric current. Bismuth telluride (Bi 2 Te 3 ), bismuth selenide (Bi 2 Se 3 ) and other alloys are commonly used thermo-electric materials. These materials are used in thermo-electric refrigeration and power generation, among others. The use of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16C22C1/10C22C1/02C23C14/14C23C14/34H10N10/852
Inventor 李宗雨丘立安汪晏清
Owner PIONEER MATERIALS INC CHENGDU
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