A flip-flop circuit for a reverse switching transistor

Abstract

The invention relates to the field of semiconductor switches, and provides a triggering circuit of a reverse switching transistor. The triggering circuit comprises a pre-charge circuit, a main circuit, a constant current charging circuit and a triggering control circuit, wherein the main circuit comprises an RSD (Reversely Switched Dynistor) switch and a main capacitor C0; the pre-charge circuit is used for providing precharge current for breakover of the RSD switch; the constant current charging circuit is used for charging for the main circuit and the pre-charge circuit; when the charging voltage reaches a default voltage threshold, a signal is sent to the pre-charge circuit by the triggering control circuit, and the pre-charge circuit sends out precharge current to the RSD switch in the main circuit; and after the breakover of the RSD switch is realized, the main capacitor C0 in the main circuit performs electric discharge and transfers the energy to a load Z0. The triggering circuit inherits the advantages of efficient discharging of direct precharge, can enable the direct precharge to be more conveniently applied to a repeat frequency rate impulse power supply, can not affect main current, and has no cycle oscillations, is shorter in the pre-charge time, and has higher current amplitude and current rise rate under the same pre-charge voltage.

Description

Technical field [0001] The invention belongs to the field of semiconductor switches, and more specifically, relates to a trigger circuit of a reverse switching transistor. Background technique [0002] In the 1990s, the Alfa Physics Technology Laboratory of the Russian Academy of Physics developed a series of solid-state pulsed power switches based on the principle of controllable plasma layer opening. High-power ultra-high-speed semiconductor switch reverse switching transistors (Reversely Switched Dynistor, RSD) were one of them. . RSD, with its advantages in the principle of uniform and synchronous opening of the entire chip area, can simultaneously obtain excellent switching performance of tens of kV high voltage, hundreds of kA high current, and tens to hundreds of kA / μs current rise rate. [0003] RSD is p + -n-p-n + A four-layer thyristor type semiconductor device, but unlike a thyristor, it is a two-terminal device without a control electrode. The RSD structure contains t...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the defects of the prior art, the purpose of the present invention is to provide a trigger circuit of a reverse switching transistor, which aims to solve the problem that in the traditional RSD resonant precharge method, the RSD cannot be given sufficient charge under the condition of a low precharge voltage. The precharge current and direct precharge method are difficult to apply to the problem of repetition frequency

Images