Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shower head and vapor deposition equipment

A sprinkler head and gas cavity technology, applied in the field of semiconductor equipment, can solve the problems of uncontrollable surface temperature of the sprinkler head, and achieve the effects of enhanced adaptability, increased temperature, and improved quality

Inactive Publication Date: 2013-08-14
光垒光电科技(上海)有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a shower head to solve the problem of uncontrollable surface temperature of the shower head in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shower head and vapor deposition equipment
  • Shower head and vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] It can be seen from the content recorded in the background art that the shower head in the prior art has the problem of uncontrollable temperature. The core idea of ​​the present invention is that by introducing at least a conductive layer, the thermal wall plate under the shower head is connected to a power source, so that the temperature control of the thermal wall plate can be realized.

[0013] Please refer to figure 2 , the present invention provides a shower head for MOCVD process, including a shower head body 1, the shower head body 1 has at least two gas chambers 10, 11 and a water cooling chamber 12; in this embodiment, The gas chamber at least includes a Group III source chamber 10 and ammonia gas (NH 3 ) cavity 11, the group III source cavity 10 and the ammonia gas cavity 11 are stacked, for example, it can be figure 2 The shown group III source chamber 10 is located above the ammonia gas chamber 11, the water cooling chamber 12 is located below the ammon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a shower head, and vapor deposition equipment. The shower head comprises a shower head body and a hot wall plate which is arranged below the shower head body and at least comprises a conducting layer, wherein the conducting layer is connected with a power source, and is capable of absorbing heat generated by a heater so as to guarantee a certain temperature; and when the power source is switched on, the conducting layer is electrified to heat because of electric current, the temperature of the hot wall plate is preferably enhanced, the temperature of the surface of the shower head is enhanced, and meanwhile, the temperature of the hot wall plate (and the surface of the shower head) can be regulated and controlled, and therefore, the industrial art requirement is suitable. Therefore, the shower head provided by the invention is more adaptive to the vapor deposition technology, and the quality of a film layer formed by the vapor deposition technology is largely improved.

Description

technical field [0001] The invention relates to semiconductor equipment, especially a shower head and vapor deposition equipment. Background technique [0002] The basic growth process of chemical vapor deposition, such as metalorganic chemical vapor deposition (MOCVD) process, is to introduce the reaction gas from the gas source into the reaction chamber, and use the substrate heated by the heater to initiate a chemical reaction, thereby forming a single crystal or polycrystalline film. In the MOCVD process, the reactants required for film growth rely on gas transport (such as flow and diffusion) to reach the growth surface. During the transport process, chemical reactions also occur. Finally, the growth particles are combined into the film lattice through adsorption and surface reactions. . [0003] In the existing process, the corresponding reaction gas is usually provided by the showerhead. In order to prevent the heat generated by the heater under the showerhead from ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 黄允文
Owner 光垒光电科技(上海)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com