Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-area bonding structure of semiconductor substrate and manufacturing method thereof

A semiconductor and large-area technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high process temperature and pressure, low yield rate, and application limitations of bonding LED technology, so as to improve yield rate , reduce requirements, reduce the effect of pressure and temperature

Inactive Publication Date: 2013-07-31
JIANGSU MICRO WAVE ELECTRONICS TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the yield rate of the whole chip bonding process of the prior art is very low, and the requirements for the cleanliness of the process environment and the surface granularity of the LED epitaxial wafer and the supporting substrate for bonding are very high. At the same time, the bonding process requires The process temperature and pressure are also relatively high, and various factors have greatly restricted the application of the whole bonding LED process
At the same time, with the increase in the size of LED epitaxial wafers and the emergence of silicon substrate LED epitaxial wafers, the problems caused by such process limitations have become more and more prominent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-area bonding structure of semiconductor substrate and manufacturing method thereof
  • Large-area bonding structure of semiconductor substrate and manufacturing method thereof
  • Large-area bonding structure of semiconductor substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0059] Specific embodiment 1 is applied to the large-area bonding process of quaternary light-emitting diodes. Usually, the substrate used for quaternary light-emitting diodes is a gallium arsenide substrate 101, and a gallium arsenide buffer is epitaxially grown on the gallium arsenide substrate. Layer 102; growing the first conductive type semiconductor layer 103 includes: n-type gallium arsenide layer, n-type InGaP corrosion stop layer, n-type doped InGaAlP layer; growing multi-quantum well light-emitting active layer 104; growing the second conductive type Semiconductor layer 105: p-type doped InGaAlP, p-type doped GaP. So far, the growth of the quaternary LED epitaxial wafer is completed. In order to perform the subsequent bonding process, a contact layer 106 is prepared on the second conductivity type semiconductor layer 105, which forms an ohmic contact with the second conductivity type semiconductor layer, and the metal forming the contact layer preferably includes Ti,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a large-area bonding structure of a semiconductor substrate, which comprises a semiconductor substrate for bonding and a support substrate for bonding, and is characterized in that linkage layers are arranged on the surfaces of the semiconductor substrate for bonding and the support substrate for bonding, wherein micro bulged blocks which are regularly or irregularly distributed are arranged on the linkage layers on at least one edge of each of the semiconductor substrate for bonding and the support substrate for bonding; and the linkage layers of the semiconductor substrate for bonding and the support substrate for bonding are linked through a bonding technology. With the adoption of a method provided by the invention, the rate of finished products of the bonding technology can be improved substantially, and further, the problems of electric leakage and the like caused by metal adhesion during scribing can be relieved greatly.

Description

[0001] technical field [0002] The invention relates to a semiconductor process, in particular to a large-area bonding structure of a semiconductor substrate and a manufacturing method thereof. Background technique [0003] The application range of light-emitting diodes in the field of solid-state lighting is becoming wider and wider. Correspondingly, there are higher requirements for improving luminous power and reliability. Vertical structure LEDs prepared by the whole chip bonding process have good device heat dissipation , high light extraction efficiency, can be well used in high-end LED applications. [0004] Many companies have applied for patents on the existing whole chip bonding process. The basic process features are the smooth metal bonding surface on the surface of the LED epitaxial wafer and the supporting substrate, and the bonding surface is bonded by increasing the temperature and pressure. However, the yield rate of the whole chip bonding process of the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L33/02H01L33/00
Inventor 许玉方
Owner JIANGSU MICRO WAVE ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com