GaN high voltage HFET with passivation plus gate dielectric multilayer structure

Abstract

A method of fabricating a multi-layer structure for a power transistor device includes performing, within the reaction chamber, a nitrogen plasma strike, resulting in the formation of a nitride layer directly on the nitride-based active semiconductor layer, and then exposing a top surface of the nitride layer to a second source. A subsequent nitrogen-oxygen plasma strike results in the formation of an oxy-nitride layer directly on the nitride layer. The nitride layer comprises a passivation layer and the oxy-nitride layer comprises a gate dielectric of the power transistor device.

Description

technical field [0001] The present invention relates generally to group III nitride compound-based semiconductor devices and methods of making the same; more particularly, to high electron mobility transistors (HEMTs) including gallium nitride (GaN) and GaN heterojunction field effect transistors A GaN switching device (HFET), and a method for manufacturing the power transistor device. Background technique [0002] Gallium nitride (GaN) and other wide-bandgap III-nitride-based direct transition semiconductor materials are advantageously used in certain electronic devices due to their excellent physical properties on silicon-based devices middle. For example, GaN and AlGaN / GaN transistors are commonly used in high-speed switching and high-power applications due to the high electron mobility, high breakdown voltage, and high saturation electron velocity characteristics offered by GaN-based materials and device structures. [0003] GaN and AlGaN / GaN integrated circuit (IC) de...

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Problems solved by technology

The accumulated charge can adversely affect the voltage-current characteristics and frequency response of IC devices

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