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Hydride vapor phase epitaxy device

A technology of hydride gas phase and gas inlet device, which is applied in the direction of chemical reactive gas, gaseous chemical plating, chemical instruments and methods, etc., can solve the problem that the uniformity of large-scale GaN substrate materials cannot be guaranteed, and it is difficult to carry out large-scale production. Production and other problems, to achieve the effect of simple structure and improved crystal quality

Inactive Publication Date: 2013-06-05
甘志银
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Due to the limitations of the internal structure and airflow transportation of traditional hydride vapor phase epitaxy devices, the uniformity of growing large-size GaN substrate materials cannot be guaranteed, and it is also difficult to carry out mass production. Therefore, it is still necessary to further improve traditional hydride vapor phase epitaxy devices.

Method used

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Examples

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Embodiment 1

[0016] Such as figure 1 Shown is a schematic diagram of the design of the device of the present invention.

[0017] The upper part of the vapor phase epitaxy reaction chamber is equipped with an air inlet device 1, which can be fed with different types, different flow rates or flow rates, and different concentrations of reaction gases or carrier gases such as hydrogen and nitrogen according to the requirements of the epitaxy process; a quartz boat is installed under the air inlet device 1 4. The quartz boat 4 is made of a quartz tube or a ceramic tube with openings. The metal source 3 is placed in the quartz boat 4, and the hydrogen chloride reaction gas introduced by the air inlet device 1 reacts with it to form metal chlorides; the lower part of the reaction chamber A loading tray 6 is provided to place the substrate 7; a heating device 8 is provided below the loading tray 6, and a heating device 5 is arranged between the loading tray 6 and the quartz boat 4 above the loadin...

Embodiment 2

[0020] This embodiment is the same as the first embodiment, the difference is that the quartz boat 4 is a straight tube or an annular tube of a quartz tube or a ceramic tube, and a straight tube structure in which multiple tubes are arranged at intervals in a plane. Such as figure 2 So not.

Embodiment 3

[0022] This embodiment is the same as the first embodiment, the difference is that the heating elements of the heating device 5 above the slide tray 6 are arranged at intervals in a plane. Such as image 3 shown

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Abstract

The invention discloses a hydride vapor phase epitaxy device. The hydride vapor phase epitaxy device comprises a vapor phase epitaxy reaction chamber. An upper part of the vapor phase epitaxy reaction chamber is provided with an air inlet device. A quartz boat is arranged below the air inlet device. A lower part of the vapor phase epitaxy reaction chamber is provided with a slide tray. Heaters are arranged below and above the slide tray. The heater below the slide tray is isolated from a reaction zone by a slide tray support. The bottom of the vapor phase epitaxy reaction chamber is provided with an exhaust port. The hydride vapor phase epitaxy device can realize preparation of a metal chloride in the vapor phase epitaxy reaction chamber and realize material epitaxy, and has a simple structure. The heaters below and above the slide tray can adjust temperature gradient distribution in the vapor phase epitaxy reaction chamber so that material crystal quality is improved. The hydride vapor phase epitaxy device has an extensible design and can be combined with metallo-organic compound vapor phase epitaxy equipment.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a hydride vapor phase epitaxy device. Background technique [0002] Nitride materials represented by gallium nitride (GaN)-based compounds have the characteristics of energy bandwidth, high saturation electron velocity, high breakdown voltage, and small dielectric constant. For GaN, its chemical properties are stable, high temperature resistance, and corrosion resistance, and it is very suitable for making radiation-resistant, high-frequency, high-power and high-density integrated electronic devices as well as blue, green and ultraviolet optoelectronic devices, so GaN-based compound materials At present, it has become a research hotspot of rapid development. [0003] At present, the main problem facing the growth of nitride materials is the lack of suitable substrates. Because it is difficult to directly synthesize GaN single crystal, high temperature and high pressure cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/10C30B25/14
CPCC23C16/4488C23C16/46C30B25/10C30B25/08C30B29/403
Inventor 甘志银
Owner 甘志银
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