Photoresist removal method and semiconductor production method

Abstract

The invention relates to a photoresist removal method and a semiconductor production method. The photoresist removal method is that after ions are injected into the art, the photoresist with a surface on which a hard layer is formed is removed. The method comprises the following steps: a softening process is used; a dry stripping process and a wet stripping process are used, due to the fact that the softening process is conducted on the hard layer of the surface of the photoresist, and the hard layer of the photoresist caused by the ion injection process and the like is softened, and thereby the removal of the photoresist is enabled to be simplified. Meanwhile the fact that the semi-conductive product is not damaged during the photoresist removal process is guaranteed, and the yield of the semi-conductive product is greatly improved. The invention further provides a semiconductor production method which comprises the photoresist removal method.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for removing photoresist after an ion implantation process. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor wafers are developing towards higher component density and high integration. The feature size of CMOS devices has entered the nanometer stage, the gate width has become thinner and the length has become shorter than before. This makes the development of semiconductor devices produce two new requirements: low doping concentration control and ultra-shallow junction. [0003] Ion implantation overcomes the limitations of chemical diffusion processes, while also providing additional advantages. There is no lateral diffusion during the ion implantation process, the process is c...

AI Technical Summary

Problems solved by technology

If the plasma energy is not properly controlled, it is very easy to damage the silicon in the substrate 10, resulting in device damage, and dry etching can easily cause radiation damage on the device surface

If the dry etching process is not carried out, the photoresist 12 of the hard surface layer 13 is simply removed by wet cleaning, although the chance of damage to the silicon surface can be reduced, but when the ion implantation energy is higher and the formed hard surface layer 13 When it is thicker, it is difficult to completely remove the photoresist and hard surface layer by simple wet cleaning, thus leaving photoresist residue 14 on the surface of the substrate 10

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