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Shifting register and alloy substrate electrode driving device

A shift register, gate connection technology, applied in static memory, digital memory information, instruments, etc., can solve the problems of high power consumption of the shift register, poor working stability of the shift register, and reduced lifespan of the shift register.

Active Publication Date: 2013-05-08
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the drift of the threshold voltage of the transistor itself and the interference of adjacent transistors in the gate drive circuit may cause problems such as poor working stability of the shift register and a decrease in its own life; at the same time, since the duty cycle of the clock signal CLKB is 50%, the response Because the thin film transistor of CLKB is always on for about 50% of the time, resulting in a large power consumption of the shift register

Method used

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  • Shifting register and alloy substrate electrode driving device
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  • Shifting register and alloy substrate electrode driving device

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Embodiment Construction

[0021] Embodiments of the present invention provide a shift register and an array substrate gate driving device, which are used to shorten the running time of some thin film transistors, improve the stability of the shift register, and reduce the power consumption of the shift register.

[0022] The present invention will be described below in conjunction with the accompanying drawings.

[0023] A kind of shift register that the embodiment of the present invention provides, its structure is as follows figure 2 shown, from figure 2 It can be seen from the figure that the register includes: a pull-up node charging unit 101, an output unit 102, a pull-down control unit 103, a pull-up node discharge unit 104, an output discharge control unit 105, and an output discharge unit 106, wherein,

[0024] The pull-up node charging unit 101 is connected to the input signal terminal, and is used to provide the first voltage signal to the output terminal in response to the input signal; ...

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Abstract

The embodiment of the invention provides a shifting register and an alloy substrate electrode driving device, and aims at shortening the operation time of a part of thin film transistors, improving the stability of the shifting register and also reducing the energy consumption of the shifting register. The shifting register comprises a pull-up node charging unit, an output unit, a pull-down control unit, a pull-up node discharging unit and an output discharging unit, wherein the output discharging control unit is used for responding to an input signal, used for providing a second voltage signal to the pull-up node discharging unit through a fourth node of the output discharging control unit, and used for responding to a reset signal to provide a first voltage signal to the pull-up node discharging unit through the fourth node of the output discharging control unit.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a shift register and an array substrate gate driving device. Background technique [0002] The TFT-LCD driver of the thin film transistor liquid crystal display mainly includes a gate driver and a data driver, wherein the gate driver converts the input clock signal through a shift register and then adds it to the gate line of the liquid crystal display panel. The gate driving circuit is formed in the same process as that of the TFTs and is simultaneously formed on the LCD panel together with the TFTs. The gate driving circuit includes a shift register having multiple stages. Each stage is connected to a corresponding gate line to output a gate driving signal. The stages of the gate drive circuit are connected to each other, the start signal is input to the first stage of each stage and the gate drive signal is sequentially output to the gate line, wherein the inp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C19/28G09G3/20G09G3/36
Inventor 杨东陈东陈希
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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