Method for improving flexible AZO (aluminum doped zinc oxide) film photoelectric property by excimer laser

Abstract

The invention discloses a method for improving flexible AZO (aluminum doped zinc oxide) film photoelectric property by an excimer laser. The method utilizes an excimer laser device to perform laser annealing for an aluminum doped zinc oxide (for short AZO) film, and thereby improving the photoelectric property of the AZO film. The method comprises the steps as follows: firstly, methods such as pulsed laser deposition and the like are utilized to generate a layer of AZO film on a flexible substrate, and then an excimer laser annealing device is used to anneal the film. The method for improving the flexible AZO film photoelectric property by the excimer laser is characterized in that high power pulse laser beams are irradiated on the AZO film, the inner film surface reaches very high temperature in an extremely short time, and the flexible substrate material is not damaged, accordingly, the crystalline degree of the film is improved, and the electrical resistivity of the film is substantially reduced, so that the photoelectric property of the film is improved.

Description

technical field [0001] The invention relates to the field of processing methods for photoelectric information functional materials, in particular to a method for improving the photoelectric performance of a flexible AZO thin film by using an excimer laser. Background technique [0002] Transparent conductive oxide film is an excellent photoelectric functional film. It has high transmittance in the visible light range, high reflectivity in the infrared region, and low resistivity close to metal. This series of advantages makes it widely used in electronic information The industry has been widely used, such as solar cells, flat panel displays, infrared heat mirrors, etc. There are many types of transparent conductive oxide films, mainly including oxides of In, Sn, Zn and Cd and their composite multi-element oxide film materials. At present, indium tin oxide (ITO) films are the most widely studied, but ITO film materials are scarce and expensive. , to the wide application of ...

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Problems solved by technology

However, these methods will cause severe physical and chemical damage to the surface of flexible materials, and the transmittance of the substrate will be significantly reduced.

In addition, the AZO transparent conductive film grown on the flexible substrate with the existing deposition technology must be carried out at low temperature, the film is not easy to crystallize, and the resistivity is too high, which is difficult to meet the requirements of the industry.

Moreover, the deposition technology of AZO transparent conductive film is also limited. Some deposition technologies with low cost and simple operation process, but must undergo subsequent high-temperature annealing cannot be effectively utilized.

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