Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for preparing highly oriented (100) lead-free piezoelectric thin film

A lead-free piezoelectric, low crystallization technology, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problem of high crystallization temperature, high cost, poor texture, etc. problem, to achieve the effects of good lattice matching, performance improvement, and good environmental protection characteristics

Inactive Publication Date: 2014-02-19
HARBIN UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the problem that most of the existing piezoelectric thin film materials contain relatively large amount of lead and that the thin film crystallization temperature is too high, the texture degree is poor, the cost is high, the process is complicated, and it is not conducive to the application of large-area Si integrated circuits. To solve the problem, a method for preparing highly (100) oriented lead-free piezoelectric films at low crystallization temperature is provided

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing highly oriented (100) lead-free piezoelectric thin film
  • Method for preparing highly oriented (100) lead-free piezoelectric thin film
  • Method for preparing highly oriented (100) lead-free piezoelectric thin film

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0019] Specific Embodiment 1: This embodiment is a method for preparing a highly (100) oriented lead-free piezoelectric film at a low crystallization temperature, which is specifically implemented according to the following steps:

[0020] 1. Add lanthanum acetate and calcium acetate to acetic acid, and stir at a stirring rate of 200r / min to 400r / min for 20min to 40min at a temperature of 60°C to 80°C to obtain solution C, and add ethylene glycol to the solution Methyl ether, at a temperature of 60°C to 80°C, stirred at a stirring rate of 200r / min to 400r / min for 20min to 40min, filtered, cooled to room temperature to obtain solution D, and then added tetratitanate to solution D Butyl ester, after stirring for 20min to 40min at a stirring rate of 200r / min to 400r / min, sol A was obtained; wherein, the mass volume ratio of lanthanum acetate and tetrabutyl titanate in sol A was (0.50 to 0.55) g: 1ml, the mass volume ratio of calcium acetate to tetrabutyl titanate is (0.25-0.30) g...

specific Embodiment approach 2

[0032] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the mass volume ratio of lanthanum acetate and tetrabutyl titanate in the A sol of step one is 0.52g: 1ml; Calcium acetate and tetrabutyl titanate The mass volume ratio of the ester is 0.27g:1ml, the volume ratio of acetic acid to tetrabutyl titanate is 9.02:1, and the volume ratio of ethylene glycol methyl ether to tetrabutyl titanate is 4.10:1. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0033] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the mass volume ratio of lead acetate and tetrabutyl titanate in the B sol of step 2 is 1.21g: 1ml, ethylene glycol methyl ether and The volume ratio of tetrabutyl titanate is 3.60:1. Others are the same as in the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thermal decomposition temperatureaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a highly (100) oriented lead-free piezoelectric thin film, relates to a method for preparing a lead-free piezoelectric thin film, and mainly aims at solving the problem of too much lead in current piezoelectric thin film and the problems of high thin film crystallization temperature, poor texture degree, high cost, complex technology and inconvenience in application of large-area Si integrated circuits in the preparation process of current piezoelectric thin films. The method provided by the invention comprises the following steps: 1, mixing sol A and sol B, adding ethylene glycol monomethyl ether, thus obtaining calcium modified lead titanate sol; 4,preparing E solution and F solution, mixing the E solution and the F solution, adding ethylene glycol monomethyl ether, thus obtaining sodium-potassium bismuth titanate sol; and 5, coating a layer of the calcium modified lead titanate sol on a substrate, and thermally decomposing, thus obtaining a seed layer thin film, and coating the sodium-potassium bismuth titanate sol in a rotating way, then thermally decomposing, at least annealing and crystallizing, and thereby completing the method. The method for preparing the highly oriented lead-free piezoelectric thin film is applied to the field of preparation of the lead-free piezoelectric thin film.

Description

technical field [0001] The invention relates to the field of lead-free piezoelectric film preparation. Background technique [0002] In recent years, piezoelectric ceramics and their thin film materials have broad application prospects in the fields of microelectronics, optoelectronics, integrated optics, and micromechanics due to their excellent dielectric, piezoelectric, electro-optic, and nonlinear optical properties. However, there are still some problems in its material selection and preparation methods: as (1) most of the existing piezoelectric films contain too much lead, which has brought serious harm to the environment and human life; (2) in the preparation process, The crystallization temperature of the thin film is too high, which is not conducive to the application of large-area Si integrated circuits; (3) The substrate usually selected for thin film preparation is (111)Pt / Ti / SiO 2 / Si, resulting in poor texture in the film preparation process, although the use ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187C04B35/624C04B35/475C04B35/472C04B35/50C23C18/12
Inventor 林家齐张颖朱汉飞迟庆国杨志韬
Owner HARBIN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com