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Low temperature preparation method for hydrogen evolution cathode material and application thereof

A hydrogen evolution cathode and cathode active material technology, applied in the direction of electrodes, cells, electrolysis process, etc., can solve the problems of increasing technical difficulty and non-repeatability, reaction speed is difficult to form particles, etc.

Active Publication Date: 2013-04-24
ENN SCI & TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The replacement reaction under high temperature conditions will make it difficult to form uniform particles due to the reaction speed is too fast
Moreover, it is mentioned in the document that the auxiliary effect of titanium dioxide needs to be used, which increases the difficulty and non-repeatability of the technology

Method used

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  • Low temperature preparation method for hydrogen evolution cathode material and application thereof
  • Low temperature preparation method for hydrogen evolution cathode material and application thereof
  • Low temperature preparation method for hydrogen evolution cathode material and application thereof

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preparation example Construction

[0023] The invention provides a low-temperature preparation method of a hydrogen-evolution cathode material. The method comprises the following steps: performing surface treatment on an active metal; performing a constant temperature treatment on a precursor reaction solution of a prepared cathode active material at a temperature of minus 20°C to 0°C ; Place the surface-treated active metal in the precursor reaction solution of the cathode active material, and perform agitation and immersion plating at a temperature of minus 20°C to 0°C; and take out the active metal and rinse and dry it for hydrogen evolution cathode material.

[0024] The inventor's design thinking is: use the precursor reaction solution of the cathode active material as the plating solution, and use active metals such as copper as the substrate to directly dip-plate precious metals such as platinum on the surface under low temperature conditions (-20°C to 0°C). , different from the reference (CN 1483539A) i...

Embodiment 1

[0043] First, cut a copper sheet with a purity of 99.9% into 3×3 cm, soak it in 2M sodium carbonate solution for 30 minutes to remove surface oil, take it out and rinse it with deionized water, and then soak it in 1M sulfuric acid solution for 30 minutes to remove surface oxidation layer, removed, rinsed with deionized water, and blown dry with nitrogen. Prepare 100ml of 10mg / L ethanol solution of chloroplatinic acid, and place it in a DHJF-8002 low-temperature (constant temperature) stirring reaction bath, control the temperature, and make the temperature reach minus 15°C. After that, place the cleaned copper sheet in a chloroplatinic acid solution at a temperature of minus 15° C. and stir for immersion plating for 2 hours. Finally, the dipped samples were taken out, rinsed with deionized water, and dried with nitrogen gas for later use.

Embodiment 2

[0050] First, cut a copper sheet with a purity of 99.9% into 3×3 cm, soak it in 2M sodium carbonate solution for 30 minutes to remove surface oil, take it out and rinse it with deionized water, and then soak it in 1M sulfuric acid solution for 30 minutes to remove surface oxidation layer, removed, rinsed with deionized water, and blown dry with nitrogen. Prepare 100ml of 10mg / L ethanol solution of chloroplatinic acid, and place it in a DHJF-8002 low-temperature (constant temperature) stirring reaction bath, control the temperature, and make the temperature reach minus 20°C. After that, place the cleaned copper sheet in a chloroplatinic acid solution at a temperature of minus 20° C. and stir for immersion plating for 2 hours. Finally, the dipped samples were taken out, rinsed with deionized water, and dried with nitrogen gas for later use. Test results: The current density at 1.2V bias is 1.04mA / cm 2 , the hydrogen production rate per unit area under 1.2V bias is 0.023mmol / hc...

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Abstract

The invention discloses a low temperature preparation method for hydrogen evolution cathode material and an application thereof. The method comprises the steps of performing surface treatment on an active metal; performing constant temperature treatment on a prepared precursor reaction solution of the cathode active material at a temperature of -20 DEG C-0 DEG C; placing the surface-treated active metal in the precursor reaction solution of the cathode active material; immersion plating the surface-treated active metal at the temperature of -20 DEG C-0 DEG C; taking out the active metal, washing and blow-drying, and thus the dried active metal is used as the hydrogen evolution cathode material. The preparation method reduces preparation cost of the cathode material and improves hydrogen evolution property simultaneously.

Description

technical field [0001] The invention relates to a preparation method of a hydrogen evolution cathode material and its application in photoelectric hydrogen production, in particular to a low-temperature preparation method of a hydrogen evolution cathode material and its application in photoelectric hydrogen production. Background technique [0002] As a secondary energy source, hydrogen energy has many advantages such as high energy density, high heat conversion efficiency, low transportation cost, and zero pollution to the environment. It is the most competitive future energy source. The direct use of solar energy to produce hydrogen has broad prospects for development. Photocatalytic hydrogen production technology is mainly divided into photocatalytic hydrogen production and photocatalytic hydrogen production. Compared with photocatalytic hydrogen production, photocatalytic hydrogen production reduces the recombination of electron-hole pairs, which improves the separation ...

Claims

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Application Information

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IPC IPC(8): C25B11/00C25B1/04C25B9/04
CPCY02E60/366Y02E60/36
Inventor 沈晓彦赵伟王文韬丁天朋段晓菲
Owner ENN SCI & TECH DEV
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