A rewiring high-density AAQFN packaging device and its manufacturing method

Abstract

The invention discloses a rewiring high-density AAQFN (Area Array Quad Flat No-lead) packaging device and a manufacture method thereof. Pins of the manufactured rewiring high-density AAQFN packaging device are etched or electroplated in a packaging technical process, insulating filling materials are configured in grooves among the pins by injection molding or a screen print method, a rewiring layer is made by an etching method, and independent pins are formed. A plastic packaging material is adopted for packaging, and second metal material layers are made on the surfaces of the pins by a chemical electroplating method after plastic packaging. The manufactured rewiring high-density AAQFN has the advantages of small size, high I / O (Input / Output) density, low manufacture cost and excellent reliability.

Description

technical field [0001] The invention relates to the technical field of manufacturing QFN components, in particular to a quadrilateral flat no-lead package with high I / O density and a manufacturing method thereof. Background technique [0002] With the development of electronic products such as mobile phones and notebook computers towards miniaturization, portability, ultra-thinness, multimedia and low-cost requirements for popularization, high-density, high-performance, high-reliability and low-cost packaging forms and Its assembly technology has been developed rapidly. Compared with expensive BGA and other packaging forms, the new packaging technology that has developed rapidly in recent years, that is, the quad flat non-lead QFN (QuadFlatNon-leadPackage) package, has good thermal and electrical properties, small size, low cost and Many advantages such as high productivity have triggered a new revolution in the field of microelectronic packaging technology. [0003] Due t...

AI Technical Summary

Problems solved by technology

However, in order to increase the number of I / Os of QFN packaged devices, more areas are needed to place multiple pins, so the size of QFN packaged devices needs to be increased, which is contrary to the requirements of miniaturization of packaged devices, and with the package As the size increases, the distance between the chip and the pins will increase, resulting in an increase in the use of metal wires, such as gold (Au) wires, which increases manufacturing costs. Too long metal wires can easily cause metal wires during the injection molding process. Problems such as collapse, line punching, and crossing lines affect the improvement of the yield and reliability of packaged devices

Therefore, in order to break through the oversized bottleneck of the existing multi-turn pin arrangement QFN package device, solve the above-mentioned yield and reliability problems and reduce manufacturing costs, it is urgent to develop a small size, high reliability, low cost, high QFN package device with I / O density and manufacturing method thereof

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