Process for producing semiconductor

Abstract

The invention discloses a process for producing a semiconductor. The method comprises steps of providing a substrate, forming at least one fin-shaped structure on the substrate and an oxide layer on the position of the substrate, which is except the fin-shaped structure, conducting a heat treatment production process and enabling the side wall of part of the fin-shaped structure to form a melted layer.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor manufacturing process which adopts a heat treatment manufacturing process to make the side wall of a fin structure more flat. Background technique [0002] As the size of semiconductor devices shrinks, maintaining the performance of small-sized semiconductor devices is a major goal of the industry. In order to improve the performance of semiconductor devices, various Fin-shaped field effect transistors (FinFETs) have been gradually developed. FinFET devices include the following advantages. First of all, the manufacturing process of fin field effect transistor elements can be integrated with the traditional logic element manufacturing process, so it has considerable manufacturing process compatibility; secondly, due to the three-dimensional shape of the fin structure, the contact between the gate and the single crystal silicon is increased. Area, so it ca...

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Problems solved by technology

However, the sidewalls of the fin structure formed by the etching photolithography process have uneven surfaces and many defects caused by etching, resulting in poor quality channel regions and subsequent vias to be formed thereon cannot be obtained. Tight coverage, thereby degrading the electrical quality of the semiconductor structures formed thereon

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