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Etching solution composition for metal oxide layer containing gallium

An oxide layer, etching solution technology, applied in surface etching compositions, chemical instruments and methods, electrical components, etc., can solve problems such as difficulty in reducing the number of processes, achieve economic advantages, simplify etching processes, and improve production. The effect of efficiency

Inactive Publication Date: 2013-03-20
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a metal layer such as a single copper layer or a copper alloy layer and a metal oxide layer have different properties, the etching process is performed differently, thus making it difficult to reduce the number of processes

Method used

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  • Etching solution composition for metal oxide layer containing gallium
  • Etching solution composition for metal oxide layer containing gallium
  • Etching solution composition for metal oxide layer containing gallium

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0083] For a mixture with a total weight percentage of 100%, 10% by weight of ammonium persulfate (APS), 5% by weight of nitric acid (HNO 3 ), 5% by weight sulfuric acid (H 2 SO 4 ) and the remaining content of water were mixed together to prepare 180 kg of an etching solution composition.

[0084] Example 2~Example 31, Comparative Example 1~Comparative Example 10

[0085] The above process described in Example 1 was repeated except for using the individual ingredients and their amounts listed in Table 1 below. The content is expressed in percent by weight here.

[0086] Table 1

[0087]

[0088]

[0089]

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Abstract

The invention discloses an etching solution composition for metal oxide layer containing gallium. The composition comprises: 5%-20% of persulfate in weight percentage, 1%-15% of mineral acid or mineral acid salt in weight percentage, and residual water to form the composition, wet etching to the metal oxide layer is uniformly carried out in a high etching speed, the metal oxide layer comprises indium oxide, zinc oxide or mixture and gallium or gallium oxide, thereby simplifying etching process and improving production efficiency.

Description

[0001] related application [0002] This application claims Korean Patent Application No. 10-2011-0089022 filed on September 2, 2011, Korean Patent Application No. 10-2011-0089027 filed on September 2, 2011 in the Korean Intellectual Property Office Patent application and priority of Korean Patent Application No. 10-2011-0089029 filed on September 2, 2011, the entire contents of which are incorporated herein by reference. technical field [0003] The invention relates to an etching solution composition for a metal oxide layer containing gallium, which can wet etch a metal oxide layer containing indium oxide, zinc oxide or a mixture thereof and gallium or gallium oxide. Background technique [0004] A typical electronic circuit driving any of semiconductor devices and flat panel display devices is a thin film transistor (TFT). Conventional methods for manufacturing TFTs generally include: forming a metal film on a substrate as a wiring material for the gate and data, prepar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/04H01L21/306
Inventor 张尚勋权五柄沈庆辅李智娟刘仁浩
Owner DONGWOO FINE CHEM CO LTD
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