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Sputtering target and manufacturing method thereof, film obtained by utilizing the target, film sheet and laminating sheet

A technology of sputtering target and manufacturing method, which is applied in the directions of sputtering coating, coating, layered products, etc., can solve the problems of sufficient gas barrier properties, decreased gas barrier properties, and current leakage, etc., so as to improve gas barrier properties, Excellent blocking properties and productivity improvement effect

Inactive Publication Date: 2013-03-13
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] However, the back surface protection sheet material disclosed in Patent Document 1 uses metal foil such as aluminum foil as a gas barrier material, so if the sheet material is applied to the back sheet of a solar cell module, the withstand voltage may be lowered and the current may be reduced. leakage
In addition, for a sheet material using metal foil, if the thickness of the metal foil is 20 μm or less, pinholes generated between the heat-resistant and weather-resistant resin and the metal foil will increase, and the gas barrier property will be significantly reduced.
On the other hand, if the thickness of the metal foil is increased, there will be a problem of increased manufacturing cost, and it will need to be sorted as waste. Since light does not transmit, it cannot be used on the light-receiving surface of the solar cell. Hazard of electrical shorts due to flashing of metal foil around punched holes
[0018] In addition, in the case of inorganic oxides such as silica and alumina used in the above-mentioned Patent Documents 2 to 8, in order to obtain high gas barrier properties, the thickness of the film must be ensured to be 100 nm or more. Not to mention sufficient gas barrier properties

Method used

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  • Sputtering target and manufacturing method thereof, film obtained by utilizing the target, film sheet and laminating sheet
  • Sputtering target and manufacturing method thereof, film obtained by utilizing the target, film sheet and laminating sheet
  • Sputtering target and manufacturing method thereof, film obtained by utilizing the target, film sheet and laminating sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] First, high-purity ZnO powder with an average particle size of 0.8 μm and a purity of 99.8%, and high-purity SnO powder with an average particle size of 0.9 μm and a purity of 99.0% were prepared. 2 Powder, PVB resin as binder, ethanol and acetone as organic solvent.

[0070] Next, ZnO powder, SnO 2 powder, binder and organic solvent, and prepare a slurry with a concentration of 40% by mass. And, ZnO powder and SnO 2 The mixing amount of the powder was adjusted so that ZnO contained in the formed sputtering target became 20 mol %, SnO 2 It becomes 80 mol%.

[0071] Next, the prepared slurry was spray-dried by a spray dryer to obtain a mixed granulated powder with an average particle size of 200 μm, and then the granulated powder was put into a predetermined mold and punched by a uniaxial punching machine. After demolding, the obtained molded body was sintered at a temperature of 1000° C. for 5 hours in the air atmosphere to obtain a sputtering target.

Embodiment 2

[0073] ZnO powder and SnO 2 The mixing amount of the powder was adjusted so that ZnO contained in the formed sputtering target was 42 mol %, SnO 2 Except being 58 mol%, it carried out similarly to Example 1, and obtained the sputtering target.

Embodiment 3

[0075] ZnO powder and SnO 2 The mixing amount of the powder was adjusted so that ZnO contained in the formed sputtering target was 61 mol %, SnO 2 Except being 39 mol%, it carried out similarly to Example 1, and obtained the sputtering target.

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Abstract

A zinc oxide-tin oxide group sputtering target consists of zinc oxide and tin oxide as a main component. The relative density of the sintered compact is 95% or more. The molar ratio of zinc oxide and tin oxide is 15:85-90:10.

Description

technical field [0001] The present invention relates to a sputtering target suitable for forming a thin film excellent in various properties such as transparency and gas barrier properties, a method for producing the sputtering target, a thin film obtained by using the target, a thin film sheet and a laminated sheet including the thin film. More specifically, it relates to a sputtering target for forming a thin film which is excellent in these various properties and is especially suitable as a gas barrier material such as a liquid crystal display, an organic EL display, electronic paper, or a solar cell module, and a method for manufacturing the same, A thin film obtained by using the target, a thin film sheet and a laminated sheet including the thin film. Background technique [0002] Devices such as liquid crystal displays, organic EL displays, or solar cells are usually not able to withstand moisture, and their characteristics rapidly deteriorate due to moisture absorptio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B32B9/04C04B35/453
Inventor 樱井英章有泉久美子
Owner MITSUBISHI MATERIALS CORP
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