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Preparation method of bismuth tungstate quantum dot and preparation method of bismuth tungstate quantum dot-graphene composite material

A technology of quantum dots and bismuth tungstate, applied in the field of photocatalytic materials, can solve the problems of high surface energy and easy agglomeration of quantum dots, and achieve high photocatalytic activity, high stability, and strong controllability

Inactive Publication Date: 2013-03-13
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, quantum dots have high surface energy and are easy to agglomerate. To exert the high catalytic performance of quantum dots, they must be fixed on the substrate.

Method used

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  • Preparation method of bismuth tungstate quantum dot and preparation method of bismuth tungstate quantum dot-graphene composite material
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  • Preparation method of bismuth tungstate quantum dot and preparation method of bismuth tungstate quantum dot-graphene composite material

Examples

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Embodiment 1

[0045] Dissolve 2.2mmoL sodium oleate in 20mL deionized water, add 0.194g Bi(NO 3 ) 3 ·5H 2 O, magnetically stirred for 1.5 hours to form an emulsion precursor solution;

[0046] Dissolve 10mg graphene oxide and 0.066g sodium tungstate in 20mL deionized water, stir for 1 hour and ultrasonically disperse graphene oxide evenly;

[0047] The two groups of solutions were mixed and stirred for 1 hour, then transferred to a 50 mL hydrothermal kettle, hydrothermally reacted at 160°C for 18 hours, and cooled naturally to room temperature;

[0048] The solid sample in the hydrothermal kettle is washed with n-hexane, ethanol, etc., and then vacuum freeze-drying technology is used to obtain a powder, which is a photocatalytic material composited with graphene and bismuth tungstate quantum dots.

[0049] figure 1 It is the XRD diffraction spectrum of the graphene bismuth tungstate quantum dot composite photocatalytic material obtained in this embodiment, and it can be seen through XRD...

Embodiment 2

[0058] The only difference between this example and Example 1 is that no graphene oxide is added in the preparation process. The rest of the content is exactly the same as described in Example 1. It is known from detection and analysis that the material obtained in this embodiment is bismuth tungstate quantum dots. Such as image 3 As shown, the size of quantum dots is about 3nm, and they spontaneously assemble into quantum wire structures. see Figure 4 The bismuth tungstate quantum dots obtained in this example have a degradation rate of 75% for rhodamine B under the same conditions as the composite material obtained in Example 1, which is lower than the performance of the composite material.

Embodiment 3

[0060] The only difference between this embodiment and Example 1 is that the emulsion-like precursor solution containing bismuth ions is made of 0.4mmoL BiCl 3 and 2.2mmoL sodium oleate dissolved in 20mL deionized water to form. The rest of the content is exactly the same as described in Example 1. After detection and analysis, it is known that the graphene bismuth tungstate quantum dot composite photocatalytic material obtained in this embodiment is an orthorhombic phase bismuth with a grain size of about 5 nm. 2 WO 6 The quantum dots are attached to large sheets of graphene. The graphene bismuth tungstate quantum dot composite photocatalytic material obtained in this example has a degradation rate of 65% for rhodamine B under the same conditions as in Example 1.

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Abstract

The invention relates to a preparation method of a bismuth tungstate quantum dot and a preparation method of a bismuth tungstate quantum dot-graphene composite material. The preparation method of the bismuth tungstate quantum dot comprises the steps: a, dissolving a soluble bismuth salt and sodium oleate in water, stirring for more than 1 hour to form a first emulsion-like precursor solution containing bismuth ions, wherein the molar concentration of the sodium oleate in the first precursor solution is smaller than 0.3mol / L; b, dissolving the soluble bismuth salt in water, and stirring and ultrasonically dispersing to form a uniform second precursor solution containing tungstate ions; and c, mixing the first precursor solution and the second precursor solution, and carrying out hydro-thermal synthesis for more than 12 hours at 120-180 DEG C. According to the bismuth tungstate quantum dot and the bismuth tungstate quantum dot-graphene composite material, prepared by using the methods provided by the invention, the bismuth tungstate quantum dot is about 3nm in dimension,not only has extremely high photocatalytic activity, but also has extremely high stability. The preparation methods disclosed by the invention do not special equipment and rigor conditions, are simple in process, strong in controllability and easy for realization of scale production and have practicability.

Description

technical field [0001] The invention relates to a bismuth tungstate quantum dot and a preparation method thereof and a graphene composite material, belonging to the technical field of photocatalytic materials. Background technique [0002] Due to the increasing environmental pollution, the research and application of semiconductor photocatalytic technology has attracted widespread attention. Photocatalysis technology is the process of using photocatalyst to absorb light to decompose organic matter. The mechanism is that the semiconductor photocatalyst is excited by light to generate non-equilibrium carriers, that is, photogenerated electrons and holes. After the electrons and holes migrate to the semiconductor surface, due to their strong oxidation and reduction capabilities, they can be removed from the organic pollutants that come into contact with them. Oxidation-reduction reactions occur in organic matter, decomposing organic matter into small molecules and finally deco...

Claims

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Application Information

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IPC IPC(8): C01G41/00C01B31/04C09K11/74B01J23/31C01B32/194
Inventor 王文中孙松美
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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