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Conductive back reflection electrode based on pyramid texture degree morphology ZnO layer

A pyramid, back reflection technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of integral reflection characteristics and small velvet factor.

Inactive Publication Date: 2013-02-27
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The back reflective electrodes currently used in thin film batteries are based on metallic silver or aluminum with velvet to achieve the velvet characteristics of the back reflective electrodes, but due to the limitation of its preparation process, its integral reflection characteristics and velvet factor are less than 100%.

Method used

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  • Conductive back reflection electrode based on pyramid texture degree morphology ZnO layer
  • Conductive back reflection electrode based on pyramid texture degree morphology ZnO layer
  • Conductive back reflection electrode based on pyramid texture degree morphology ZnO layer

Examples

Experimental program
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Effect test

Embodiment 1

[0022] A kind of preparation method based on the conductive back reflection electrode of pyramid velvet morphology ZnO layer, the steps are as follows:

[0023] 1) ZnO thin films were prepared on a clean glass substrate by metal-organic chemical vapor deposition technology, the heating temperature was 175°C, and the background vacuum was 5×10 -4 Pa, the flow rate of argon gas is 55 sccm, the reaction pressure is 1.2 Torr, the gas flow rate of water vapor and argon is 110 sccm, the flow rate of diethyl zinc and argon is 180 sccm, the growth time is 50 min, and the intrinsic ZnO with a thickness of 3000nm is transparent Conductive film;

[0024] 2) On the ZnO thin film layer with a pyramid structure surface morphology prepared above, a silver thin film layer with a thickness of 160nm is deposited by evaporation;

[0025] 3) On the above-mentioned silver thin film layer, a layer of ZnO thin film with a thickness of 100 nm is deposited as an interface layer by magnetron sputterin...

Embodiment 2

[0030] A kind of preparation method based on the conductive back reflection electrode of pyramid velvet morphology ZnO layer, the steps are as follows:

[0031] 1) The ZnO thin film was grown on a clean glass substrate by ultrasonic spray technology, zinc acetate was used as the Zn source, water and absolute ethanol were mixed at a volume ratio of 1:3 as a solvent, and zinc acetate was configured to 0.2mol / L solution, while adding 10vol.% glacial acetic acid, the growth temperature is 470°C, compressed air is used as the carrier gas, the growth time is 200min, and an intrinsic ZnO transparent conductive film with a thickness of about 5000nm is obtained;

[0032] 2) On the ZnO thin film layer with a pyramid structure surface morphology prepared above, a silver thin film layer with a thickness of 120nm is deposited by evaporation;

[0033] 3) On the above-mentioned silver thin film layer, a layer of ZnO thin film with a thickness of 100 nm is deposited as an interface layer by ...

Embodiment 3

[0036] A kind of preparation method based on the conductive back reflection electrode of pyramid velvet morphology ZnO layer, the steps are as follows:

[0037] 1) ZnO thin films were prepared on a clean glass substrate by metal-organic chemical vapor deposition technology, the heating temperature was 175°C, and the background vacuum was 5×10 -4 Pa, the flow rate of argon gas is 55 sccm, the reaction pressure is 1.0 Torr, the gas flow rate of water vapor and argon is 110 sccm, the flow rate of diethyl zinc and argon is 180 sccm, the growth time is 70 min, and the intrinsic ZnO with a thickness of 5000nm is transparent Conductive film;

[0038] 2) On the above-prepared ZnO thin film layer with a pyramid structure surface morphology, a silver thin film layer with a thickness of 150nm is deposited by evaporation;

[0039] 3) On the above-mentioned silver thin film layer, a layer of ZnO thin film with a thickness of 100 nm is deposited as an interface layer by magnetron sputterin...

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Abstract

Disclosed is a conductive back reflection electrode based on a pyramid texture degree morphology ZnO layer. A substrate, a ZnO layer with pyramid surface morphology, a metallic silver layer and a ZnO interface layer form a thin film laminated structure, and the ZnO layer with the pyramid surface morphology is made of intrinsic ZnO or an Al, Ga, B, Mo and W doped ZnO material. A preparation method includes that firstly a ZnO thin film with the pyramid morphology is grown by an ultrasonic spray technology or prepared by a metallorganic chemical vapor deposition technology on the substrate, and then a silver thin film layer and a ZnO thin film interface layer are sequentially prepared. The conductive back reflection electrode based on the pyramid texture degree morphology ZnO layer has the advantages that the light trapping effect is good, wide spectrum and high texture degree reflection can be simultaneously achieved, the light use ratio is high, the preparation method is simple in process and easy to implement, and compared with short-circuit current density of traditional batteries prepared under same conditions and based on texture degree metallic aluminum for achieving texture degree reflection, the short-circuit current density of a thin film solar cell with the back reflection electrode is improved by above 10%.

Description

technical field [0001] The invention belongs to the preparation process of a back reflective electrode, in particular to a conductive back reflective electrode based on a ZnO layer with a pyramid velvet shape. Background technique [0002] With the rapid development of human society, the demand for energy is also increasing. Photovoltaic cells, through the unique photoelectric conversion effect of semiconductor materials, directly use clean, inexhaustible and inexhaustible solar energy resources, bringing mankind the best solution to energy problems on the premise of not polluting the environment . The first-generation solar cells represented by monocrystalline silicon or polycrystalline silicon wafers have achieved an efficiency of more than 24%, becoming the main force in the current photovoltaic market. However, since the production cost of these solar cells mainly comes from the loss of materials, such as monocrystalline silicon, polycrystalline silicon wafers, and pac...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18H01L31/20
CPCY02P70/50
Inventor 张晓丹赵颖白立沙赵慧旭陈新亮魏长春张德坤侯国付
Owner NANKAI UNIV
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