Method for manufacturing low layer number graphene film on silicon carbide substrate

Abstract

The present invention relates to a method for manufacturing a low layer number graphene film on a silicon carbide substrate. The method comprises the following process steps: 1) selecting a silicon surface silicon carbide substrate, and placing on a graphite base having a tantalum carbide coating; 2) carrying out system heating; 3) reducing a reaction chamber temperature to less than 1200 DEG C; 4) increasing argon flow; 5) carrying out system heating; 6) reducing argon flow, and reducing reaction chamber pressure to 0-1 mbar; 7) continuously adopting a mechanical pump to control a reaction chamber vacuum degree; 8) adopting a molecular pump to control the reaction chamber vacuum degree, and starting a carbonization process; 9) closing heating, and introducing argon; 10) reducing the reaction chamber temperature to 1000 DEG C, and closing argon; and 11) reducing the reaction chamber temperature, introducing argon to the reaction chamber to achieve atmospheric pressure, opening the chamber, and taking the sheet. The method has the following advantages that: graphene film formation can be promoted, sublimation of silicon atoms in the SiC substrate during heating and cooling processes can be effectively inhibited, and the carbonization process is easily controlled so as to achieve low layer number graphene film preparation.

Description

technical field [0001] The invention proposes a method for manufacturing a low-layer graphene film on a silicon carbide substrate. The graphene film prepared by the method has a low layer number, good repeatability, and is stable and controllable. It belongs to the technical field of semiconductor materials. Background technique [0002] Graphene is a monoatomic layer graphite crystal film discovered by the Geim research group of the University of Manchester in 2004. It is a two-dimensional honeycomb substance composed of sp2 hybridized carbon atoms. It is the basic unit for constructing other dimensional carbon materials. It can wrap Roll up to form zero-dimensional fullerenes, roll up to form one-dimensional carbon nanotubes, and stack layers to form three-dimensional graphite. The C-C bond length of graphene is about 0.142nm. The perfect graphene is two-dimensional and only includes hexagonal cells (equiangular hexagons). It is the first two-dimensional crystal discovere...

AI Technical Summary

Problems solved by technology

Unlike epitaxial growth, the SiC thermal decomposition method cannot control the number of graphene film layers by adjusting the time and flow of the source.

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