Heat treating equipment and method for semiconductor chip

A technology for heat treatment equipment and semiconductors, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as the inability to accurately measure the oxygen content of the reaction chamber and the inability to ensure the production quality of silicon wafers, and achieve the goal of ensuring production quality. Effect

Active Publication Date: 2013-01-16
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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AI Technical Summary

Problems solved by technology

However, in the prior art, the oxygen content inside the reaction chamber cannot be accurately measured, and the production quality of silicon wafers cannot be guaranteed.

Method used

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  • Heat treating equipment and method for semiconductor chip
  • Heat treating equipment and method for semiconductor chip
  • Heat treating equipment and method for semiconductor chip

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Embodiment Construction

[0028] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0029] figure 1 It is a structural schematic diagram of a semiconductor wafer heat treatment equipment according to an embodiment of the present invention, see figure 1 , the heat treatment equipment includes: a heater 1, a process pipe 2, a sealing plate 3, an air inlet pipe 4, an exhaust pipe 5, a gas collection unit 6 and an oxygen content measurement unit 7, and the mouth of the process pipe 2 is vertically downward , the process tube 2 is partly placed in the heater 1, and the outer edge of the nozzle of the process tube 2 is provided with a flange 8 (the process tube 2 and the flange 8 can be integrally formed or processed separately, this In the embodiment, prefer...

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Abstract

The invention discloses heat-treating equipment and method for a semiconductor chip, which relate to the technical field of a semiconductor chip process, the heat-treating equipment comprises a heater, a process pipe, a seal plate, a gas inlet pipe, a gas outlet pipe, a gas collection unit and an oxygen content measuring unit, wherein an orifice of the process pipe is perpendicularly downward, a part of the process pipe is positioned in the heater, a flange is arranged at the outer edge of the orifice of the process pipe, the seal plate is connected with the process pipe by the flange, an inlet of the gas outlet pipe is formed on a side wall of the process pipe, close to the orifice, an outlet of the gas inlet pipe is formed at the end of the process pipe, opposite to the orifice, the gas collection unit is connected with an outlet of the gas outlet pipe, and the oxygen content measuring unit is connected with the gas collection unit. With the adoption of the gas collection unit and the oxygen content measuring unit, the oxygen content in a reaction cavity of the heat-treating equipment can be accurately measured, after the oxygen content in the reaction cavity is below a certain threshold, the heat-treating process is performed to ensure the production quality of the silicon chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer technology, in particular to a semiconductor wafer heat treatment equipment and method. Background technique [0002] Semiconductor heat treatment equipment transfers the wafer to the reaction chamber, and undergoes heat treatment processes such as high-temperature annealing, oxidation or diffusion to meet the requirements of the next step. Maintaining and improving the yield rate is very important to the semiconductor industry. In the high-temperature heat treatment process, the gas atmosphere in the reaction chamber directly affects the quality of the wafer after heat treatment. Therefore, many semiconductor equipment seal the reaction chamber well to ensure Ensure the gas atmosphere inside the reaction chamber. [0003] Through surface oxidation, a silicon dioxide layer can be produced on the surface of the wafer, which is a heat treatment process that is often used in the process ...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/324
Inventor 赵燕平董金卫钟华赵星梅
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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