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In-situ stress control-based self-separation method for III-nitride thick membrane

A nitride, self-separation technology, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve problems such as strengthening, and achieve the effect of simplified process, good ease of use and controllability

Inactive Publication Date: 2012-12-12
北京燕园中镓半导体工程研发中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As the sample cools, the bend may further intensify, change or reverse

Method used

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  • In-situ stress control-based self-separation method for III-nitride thick membrane
  • In-situ stress control-based self-separation method for III-nitride thick membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1: Preparation of c-plane self-supporting GaN substrate

[0034] Such as figure 2As shown, GaN with a thickness of 150 microns is grown on a silicon substrate in an MOCVD equipment, and then under the conditions of 10 liters of hydrogen as a carrier gas, 8 liters of ammonia as a protective gas, and a pressure of 200 Torr, a linear heating rate is first adopted 120°C / min, gradually increasing the chamber temperature, the stress of the corresponding epitaxial GaN film will change from compressive stress at room temperature to zero stress when it reaches 800°C, the temperature continues to rise, and the stress changes into tensile stress, and the tensile stress changes with temperature The rise continues to increase, and it stabilizes at 1200°C for 600 seconds, and the temperature is gradually lowered to room temperature, and the opposite stress change process can be obtained. The stress in the corresponding GaN material changes from tensile stress to compressive ...

Embodiment 2

[0035] Example 2: Preparation of c-plane self-supporting GaN substrate

[0036] Grow GaN with a thickness of 150 microns on a silicon carbide substrate in an MOCVD equipment, and then use 4 liters of nitrogen and 4 liters of hydrogen as the carrier gas, 4 liters of ammonia as the protective gas, and a pressure of 300 Torr. The heating rate is 60°C / min. Gradually increase the chamber temperature. The stress of the corresponding sample will change from compressive stress at room temperature to tensile stress as the temperature rises. It will stabilize at 1300°C for 50 seconds, and then gradually reduce the annealing temperature to room temperature. The stress in the corresponding GaN material changes from tensile stress to compressive stress, that is, the reverse change of stress. The second time adopts a linear heating rate of 120°C / min, gradually increasing the temperature of the chamber, accelerating the heating rate, thereby shortening the time for the stress of the correspo...

Embodiment 3

[0037] Example 3: Preparation of a-plane self-supporting GaN substrate

[0038] A-plane GaN with a thickness of 100 microns was grown on a sapphire substrate in MOCVD equipment, and then under the conditions of 7 liters of nitrogen and 3 liters of hydrogen as carrier gas, 5 liters of ammonia as protective gas, and a pressure of 75 Torr, firstly use The linear heating rate is 60°C / min. Gradually increase the chamber temperature. The stress of the corresponding sample will change from compressive stress at room temperature to tensile stress as the temperature rises. It will stabilize at 1000°C for 1000 seconds, and gradually reduce the annealing temperature to room temperature. The stress in the corresponding GaN material changes from tensile stress to compressive stress, that is, the reverse change of stress. The second time adopts a linear heating rate of 120°C / min to gradually increase the temperature of the chamber and accelerate the heating rate, thereby shortening the time...

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Abstract

The invention discloses an in-situ stress control-based self-separation method for an III-nitride thick membrane. Under a proper annealing condition, the III-nitride thick membrane growing on a substrate is gradually heated, and an on-the-spot stress monitoring system is used for monitoring the stress of the III-nitride thick membrane at the same time; when a stress state shifts to a positive stress state from a negative stress state, the III-nitride thick membrane is maintained at a high temperature for a period of time and then gradually cooled, and the positive stress state is switched to the negative stress state; such a process of heating and cooling is cyclically repeated until the III-nitride thick membrane is separated from the substrate. According to the invention, through adjustment of heat cycle conditions, stress concentration of a thick membrane material at a specific position is realized, the specific position of the thick membrane material is allowed to undergo deformation in the process of continuous switching between positive stress and negative stress, which enables interfacial bonding strength at the specific position to be reduced, and therefore, self-separation of the thick membrane is realized; and the method provided by the invention can be used for separation of a GaN thick membrane, is simple and controllable and has a good application prospect.

Description

technical field [0001] The invention relates to the field of stress control of materials and the technical field of metal organic chemical vapor deposition (MOCVD), in particular to an adjustment method for realizing the self-separation of Group III nitride (such as GaN) thick films by controlling the stress of epitaxial materials. Background technique [0002] The lattice mismatch and thermal mismatch between the sapphire or silicon carbide substrates widely used at present and the GaN material are relatively large, resulting in a decline in the quality of the GaN material and its devices. The technology of preparing self-supporting GaN or composite thin-film GaN substrates by using the epitaxy method combined with HVPE and MOCVD or MBE has always been very important for GaN high-power LEDs, lasers and other high-performance optoelectronic devices. [0003] However, due to the large lattice mismatch and thermal mismatch between substrates such as sapphire or silicon carbide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/16C30B29/38
Inventor 马志芳杨志坚张国义李丁吴洁君贾传宇陈志忠于彤军康香宁胡晓东秦志新龙浩
Owner 北京燕园中镓半导体工程研发中心有限公司
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