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Polycrystalline silicon ingot, manufacturing method thereof and solar cell

A technology of polycrystalline silicon ingots and manufacturing methods, which is applied to the growth of polycrystalline materials, chemical instruments and methods, circuits, etc., and can solve the problems of many grain boundaries and dislocations, small grains, and low attenuation coefficients of polycrystalline silicon solar cells

Inactive Publication Date: 2012-11-28
ZHEJIANG YUHUI SOLAR ENERGY SOURCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with monocrystalline silicon ingots, there are more defects in polycrystalline silicon ingots, the grains are small, and there are more grain boundaries and dislocations between conventional polycrystalline silicon grains, resulting in rapid recombination of charge carriers, resulting in low minority carrier lifetime. , and, because the orientation between crystal grains is random, it is difficult to texture the surface of the wafer well, so that the photoelectric conversion efficiency of conventional polycrystalline silicon solar cells is lower than that of monocrystalline silicon solar cells, but the oxygen content in polycrystalline silicon ingots It can be controlled at a good level, so that the attenuation coefficient of polycrystalline silicon solar cells is low

Method used

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  • Polycrystalline silicon ingot, manufacturing method thereof and solar cell
  • Polycrystalline silicon ingot, manufacturing method thereof and solar cell
  • Polycrystalline silicon ingot, manufacturing method thereof and solar cell

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Embodiment 1

[0111] Based on the above research, an embodiment of the present invention provides a method for manufacturing a polycrystalline silicon ingot. The flowchart of the method is as follows: figure 1 As shown, including the following steps:

[0112] Step S101: laying seed crystals on the bottom of the container in the polysilicon ingot growth furnace to form a seed crystal layer;

[0113] Wherein, the seed layer may be a whole large single crystal seed crystal having the same size and shape as the bottom of the container, or it may be formed by splicing a plurality of small single crystal seed crystals. In addition, the seed crystal is a single crystal silicon with a fixed crystallographic orientation, and the seed layer includes at least one single crystal silicon layer with a crystallographic orientation. Preferably, the seed crystal in this embodiment is (100), ( 110) or (111) oriented single crystal silicon.

[0114] Specifically, the seed layer in this embodiment includes at least ...

Embodiment 2

[0136] In the normal ingot casting process, after the crystal growth is completed, the crystal needs to be cooled to a certain temperature, the polycrystalline silicon ingot is removed from the ingot furnace, and then the polycrystalline silicon ingot is further processed.

[0137] As described in step 104 in the first embodiment, the crystallization rate of molten silicon will affect the quality of the final product. The growth rate can be slowed to reduce the hard spots and impurity-rich layers in the product. The growth rate of the crystal is relatively difficult to control. To avoid the above-mentioned defects, this embodiment is based on the first embodiment. figure 1 The process of completing the crystal growth in step S104 is further defined, and the specific process of polycrystalline silicon ingot formation is described in detail.

[0138] See figure 2 In this embodiment, the thermal field in the polycrystalline silicon ingot growth furnace is controlled, and the liquid la...

Embodiment 3

[0148] The flow chart of the manufacturing method of the polycrystalline silicon ingot disclosed in this embodiment is shown in 4. The difference from the above two embodiments is that the selection of the seed crystal, the method of forming the seed layer, and the loading of silicon raw materials are used in this embodiment. Process specificity, Figure 4 Only the method in Embodiment 2 is used as an example for description. Of course, the method in this embodiment can also be applied to the method in Embodiment 1. The method in this embodiment includes the following steps:

[0149] Step S201: at the bottom of the container in the polysilicon ingot growth furnace, splicing and tiling seed crystals with the same crystallographic orientation to form the seed layer, the seed layer being substantially parallel to the bottom of the container;

[0150] In this embodiment, it is preferable to use (100)-oriented monocrystalline silicon to form the seed layer. Preferably, the area of ​​the ...

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Abstract

The invention discloses a manufacturing method of a polycrystalline silicon ingot. The manufacturing method comprises the steps of paving seed crystals on the bottom of a container in a polycrystalline silicon ingot growth furnace to form a seed crystal layer; loading solid silicon raw materials on the seed crystal layer; heating the container to melt the silicon raw materials and part of seed crystal layer to form a liquid layer, and at least keeping part of the seed crystal layer contacted with the bottom of the container to be in the solid state; controlling a thermal field in the polycrystalline silicon ingot growth furnace, and crystallizing the liquid layer to form a crystallization layer so as to move a solid-liquid interface to the direction far away from the bottom of the container to complete the growth of the polycrystalline silicon ingot. The polycrystalline silicon ingot produced by adopting the method disclosed by the invention is low in impurity content, the produced solar cell is low in cost and attenuation coefficient, and the photoelectric conversion efficiency is high.

Description

Technical field [0001] The invention relates to the manufacturing technology of monocrystalline silicon and polycrystalline silicon and the photoelectric field, and in particular to a polycrystalline silicon ingot, a manufacturing method thereof, and a solar cell. Background technique [0002] Solar cells can convert light energy into electrical energy. The level of photoelectric conversion efficiency and the speed of battery attenuation are important parameters to measure the quality of solar cells. At present, according to different materials, solar cells are mainly divided into monocrystalline silicon solar cells and polycrystalline silicon solar cells. [0003] Among them, single crystal silicon ingots are formed by melting silicon raw materials containing dopants and pulling crystalline silicon out of the melting zone to crystallize. The usual method for producing single crystal silicon ingots is the Czochralski (Czochralski, CZ method for short) ) And suspension zone melting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06H01L31/0368G01F23/04
CPCY02E10/50
Inventor 郑志东汤旋彭春秋石郧熙翟蕊李娟刘文涛
Owner ZHEJIANG YUHUI SOLAR ENERGY SOURCE
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