Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Aspherical focal length-variable photoetching objective lens system

A technology of lithography objective lens and variable focal length, which is applied in the field of optics, can solve the problem that the same lithography objective lens cannot be used to expose different proportions of mask template exposure patterns, etc., and achieve optical total length, compact structure, and small aperture. Effect

Active Publication Date: 2012-11-21
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem that the existing lithography objective lens is a fixed-focus system, and the same lithography objective lens cannot be used to expose different scale mask exposure patterns, the present invention provides an aspherical variable focal length lithography objective lens system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Aspherical focal length-variable photoetching objective lens system
  • Aspherical focal length-variable photoetching objective lens system
  • Aspherical focal length-variable photoetching objective lens system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1: as figure 1 As shown, the present invention provides a kind of refraction type aspherical variable focal length lithography objective lens system working at a wavelength of 410nm by the structure of zoom1, which is used to image the pattern of the object plane O on the image plane I, which consists of 22 optical lenses Composition, the lens is marked as L1~L22 from the object side to the image side, the 22 optical lenses are divided into G1~G5 groups according to the power and the role in the system of the present invention, the distribution of power from the object plane The order to the image plane is positive-negative-positive-negative-positive, the distance from the object plane to the image plane is 805mm, the largest lens in the system has a full aperture of less than 153mm, the image square F number is 2, the image square numerical aperture is 0.2, and the magnification is 0.25. The image size is 14.8mm.

[0042] The specific structure of the asphe...

Embodiment 2

[0062] Such as Figure 6 As shown, the structure diagram of the present invention at the zoom position zoom2, such as Figure 7 As shown, the transfer function graph of the optical system at the zoom position zoom2, such as Figure 8 As shown, the transfer function graph of the present invention when zoom position zoom2 is 1 μm away from focus, such as Figure 9 and Figure 10 As shown, the present invention has field curvature and distortion graphics at the zoom position zoom2.

Embodiment 3

[0064] Such as Figure 11 As shown, the structure diagram of the present invention at the zoom position zoom3, such as Figure 12 As shown, the transfer function graph of this optical system, such as Figure 13 As shown, the transfer function graph of the present invention when the zoom position zoom3 is defocused by 1 μm, such as Figure 14 and Figure 15 As shown, the field curvature and distortion graph of the present invention at the zoom position zoom3.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an aspherical focal length-variable photoetching objective lens system, belonging to the technical field of optics, and aiming at solving the problem that the existing photoetching objective lens can not expose mask plate exposure patterns with different scale sizes by the same photoetching objective lens. The system provided by the invention from an object plane to an image plane sequentially comprises: the object plane, a first lens set, a second lens set, a third lens set, a fourth lens set, a fifth lens set and the image plane; the object plane is the plane where a mask plate is arranged; the first lens set is used for fixing the distance between the object plane and the first lens set of a focal length-variable system; the second lens set is used for changing the focal length of the photoetching objective lens and the size of the image plane; the third lens ser is used for compensating the movement of the image plane when a zooming group moves, so that the position of the image plane is invariably kept in the whole process of zooming; the fourth lens set has the negative power, the fifth lens set has the positive power, and a back fixed set consists of the fourth lens and the fifth lens, so that the invariable distance between the final lens of the photoetching objective lens which is near to one side of the image plane and the image plane can be guaranteed; and the image plane is the plane where an etching substrate is arranged.

Description

technical field [0001] The invention belongs to the field of optical technology, and in particular relates to an aspherical variable focal length lithography objective lens system. Background technique [0002] The lithography device is a very important equipment in the lithography technology of the modern high-resolution integrated circuit manufacturing process. The lithography objective lens system is a crucial core component in lithography equipment. Lithography devices are mainly divided into two types: masked lithography devices and maskless lithography devices according to whether or not a mask is used. Most of the two lithography methods use projection lithography exposure. The masked lithography device projects the exposure pattern information on the mask onto the etched substrate; the maskless lithography device projects the exposure pattern information of the spatial light modulator onto the etched substrate, and the etched substrate is processed by developing, et...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B15/173G03F7/20
Inventor 刘伟奇吕博冯睿魏忠伦柳华康玉思姜珊
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com