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Sol-gel-hydrothermal method for preparing bismuth tungstate and indium-doped bismuth tungstate

A technology of bismuth tungstate and hydrothermal method, applied in chemical instruments and methods, tungsten compounds, catalysts for physical/chemical processes, etc., can solve the problem of grain agglomeration and uneven particle size distribution, reduce the photocatalytic performance of bismuth tungstate, It is not conducive to problems such as compound doping of multiple elements, and achieves good photocatalytic activity, complete crystal form, and good crystal performance.

Inactive Publication Date: 2012-11-07
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, both the co-precipitation method and the sol-gel method require high-temperature calcination to obtain crystalline bismuth tungstate during the preparation process, and the high-temperature process will directly lead to grain agglomeration and uneven particle size distribution, thereby reducing the photocatalysis of bismuth tungstate. Performance: The preparation of bismuth tungstate by hydrothermal method saves the high-temperature calcination link, and the obtained product has the advantages of complete crystal form and high purity, but this method is not conducive to the compound doping of various elements, and the doping treatment of bismuth tungstate is the most important method to improve its photocatalytic activity

Method used

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  • Sol-gel-hydrothermal method for preparing bismuth tungstate and indium-doped bismuth tungstate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] (1) Prepare 10mL of bismuth nitrate solution with a concentration of 0.024mol / L and ammonium tungstate solution with a concentration of 0.001mol / L. Under stirring conditions, mix 3.6mL and 1.8mL of EDTA with a concentration of 0.1mol / L The solution is added to the bismuth nitrate solution and the ammonium tungstate solution respectively;

[0013] (2) Mix the above two transparent solutions evenly and keep in a water bath at 60°C for 24 hours to obtain a wet gel, and dry the wet gel at 110°C to obtain a dry gel;

[0014] (3) Move the dry gel into a hydrothermal reaction kettle, add 50ml of deionized water and adjust the pH of the reaction solution to 2.0 with nitric acid, then keep it at 220°C for 12 hours, then cool it down to room temperature naturally. The obtained product was centrifuged, washed three times with deionized water, and dried in vacuum at 60°C to obtain a bismuth tungstate photocatalyst with high catalytic activity. It can be seen from the X-ray diffract...

Embodiment 2

[0016] (1) Prepare 10 mL of bismuth nitrate solution with a concentration of 0.24 mol / L and ammonium tungstate solution with a concentration of 0.01 mol / L, and mix 7.2 mL and 3.6 mL of 0.5 mol / L EDTA solution is added to bismuth nitrate solution and ammonium tungstate solution;

[0017] (2) Mix the above two transparent solutions evenly and keep in a water bath at 80°C for 24 hours to obtain a wet gel, and dry the wet gel at 110°C to obtain a dry gel;

[0018] (3) Move the dry gel to a hydrothermal reaction kettle, add 50ml of deionized water and adjust the pH of the reaction solution to 11.0 with ammonia water, then keep it at 240°C for 6 hours, then cool it down to room temperature naturally. The obtained product was centrifuged, washed three times with deionized water, and vacuum-dried at 60° C. to obtain a bismuth tungstate photocatalyst with high catalytic activity.

Embodiment 3

[0020] (1) Prepare 10mL of bismuth nitrate solution with a concentration of 0.12mol / L and ammonium tungstate solution with a concentration of 0.005mol / L. EDTA solution is added to bismuth nitrate solution and ammonium tungstate solution;

[0021] (2) Mix the above two transparent solutions evenly and keep in a water bath at 60°C for 12 hours to obtain a wet gel, and dry the wet gel at 110°C to obtain a dry gel;

[0022] (3) Move the dry gel into a hydrothermal reaction kettle, add 50ml of deionized water and adjust the pH of the reaction solution to 2.0 with nitric acid, then keep it at 180°C for 36 hours, then cool it down to room temperature naturally. The obtained product was centrifuged, washed three times with deionized water, and vacuum-dried at 60° C. to obtain a bismuth tungstate photocatalyst with high catalytic activity.

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Abstract

The invention discloses a sol-gel-hydrothermal method for preparing bismuth tungstate and indium-doped bismuth tungstate. The technical scheme point of the invention is to respectively disclose a sol-gel-hydrothermal method for preparing a bismuth tungstate catalyst and a sol-gel-hydrothermal method for preparing an indium-doped bismuth tungstate catalyst. The preparation method disclosed by the invention has the advantages of simple operation and low cost; and the prepared bismuth tungstate catalyst and the indium-doped bismuth tungstate catalyst have excellent photocatalysis performance.

Description

technical field [0001] The present invention relates to a kind of bismuth tungstate (Bi 2 WO 6 ) and a preparation method of indium-doped bismuth tungstate, belonging to the field of inorganic functional materials, in particular a method for preparing bismuth tungstate and indium-doped bismuth tungstate by a sol-gel-hydrothermal method. Background technique [0002] Environmental pollution is a major challenge faced by human beings. Using photocatalytic technology to control environmental problems is one of the most active research fields at present. Finding high-efficiency photocatalysts is the top priority in this field. Early studies focused on TiO 2 , it has excellent properties such as high catalytic activity, good stability, low price, and non-toxicity, so it is favored. But TiO 2 The band gap is 3.2eV, and its catalytic activity can only be excited under ultraviolet light with a wavelength less than 387nm. In the solar energy that reaches the ground, the energ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/00B01J23/31
Inventor 刘玉民吕华陈得军李紫金邢新艳李运清梁蕊席国喜
Owner HENAN NORMAL UNIV
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