Packaging-first and etching-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit

Abstract

The invention relates to a packaging-first and etching-later manufacturing method for a chip formal double-surface three-dimensional circuit. The method comprises the following technology steps of taking a metal substrate; pre-plating copper material on the surface of the metal substrate; carrying out the operation of pasting a photo-resisting film; removing a part of the photo-resisting film from the front surface of the metal substrate; electro-plating an inert metal circuit layer; electro-plating a metal circuit layer; packaging; carrying out the operation of pasting the photo-resisting film; tapping on the surface of plastic package material; electro-plating the metal circuit layer; coating bonding materials; installing a chip; bonding with metal wires; packaging; carrying out the operation of pasting the photo-resisting film; chemical-etching; electro-plating the metal circuit layer; packaging; tapping on the surface of plastic package material; digging a groove on the surface of the plastic package material; electro-plating the metal circuit layer; coating a circuit screen plate; pre-processing of metallization; removing the metal screen plate; electro-plating the metal circuit layer; packaging; tapping on the surface of plastic package material; cleaning; implanting a metal ball; and cutting a finished product. The method disclosed by the invention has the beneficial effects that the manufacturing cost is lowered, the safety and the reliability of a packaging body are increased, the environment pollution is reduced, and the design and the manufacturing of a high-density circuit can be really realized.

Description

technical field [0001] The invention relates to a double-sided three-dimensional circuit chip front-mounting-first-sealing-then-etching manufacturing method and its packaging structure, belonging to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 121 , take a substrate made of glass fiber material, [0004] Step two, see Figure 122 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 123 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 124 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 125 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 126 , coated with a photore...

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Problems solved by technology

[0019]3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the reliability and safety ability or is the level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 133 , the best production capacity is that the etching gap is approximately equal to the thickness of the

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