Thin film transistor and manufacturing method thereof

Abstract

The invention provides a thin film transistor and a manufacturing method thereof. The method comprises the following steps: forming a grid electrode, a grid insulation layer, a semiconductor layer and a doped semiconductor layer on a base plate; nitriding by using plasma, so that Si-N weak bonding on the surface of the doped semiconductor layer; depositing a second metal layer; and etching to form a source electrode and a drain electrode and exposing the semiconductor layer between the source electrode and the drain electrode. The Si-N weak bonding is formed on the doped semiconductor layer before the second metal layer is deposited, so silicon atoms between the second metal layer and the doped semiconductor layer are prevented from forming bonding, contact resistance is reduced, and etching residue caused by reduced etching speed is avoided.

Description

[technical field [0001] The invention relates to a thin film transistor substrate and a manufacturing method thereof. 【Background technique】 [0002] Liquid crystal displays have been widely used in recent years because of their low power consumption, low manufacturing cost, and no radiation. A liquid crystal display generally includes a thin film transistor array substrate, a color filter substrate and a liquid crystal layer sandwiched between the thin film transistor array substrate and the color filter substrate, wherein the thin film transistor is mainly used to control the data writing of the liquid crystal display, It mainly includes components such as gate, channel region, source and drain. [0003] In today's thin film transistor array substrate process, the number of masks used can be reduced to five or four mask processes or even three masks. Taking the general five mask process as an example, the manufacture of thin film transistors accounts for The first three ...

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Problems solved by technology

[0008] However, in this process, after forming the channel layer 130 and the doped semiconductor layer 140, the metal layer 250 is deposited immediately, and the metal atoms in the metal layer 250 are easy to combine with the silicon atoms of the ohmic contact layer 140, thereby increasing the contact resistance. , leading to an increase in the cut-off current Ioff and threshold voltage Vth of the thin film transistor; in addition, it will also slow down the subsequent etching rate of the metal layer, and even cause etching residues of the metal layer, affecting the production yield of the thin film transistor

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