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Preparation method of copper indium selenium sulfide thin film for solar cell

A technology of copper indium selenium sulfur and solar cells, which is applied in the manufacture of circuits, electrical components, and final products, can solve problems such as toxicity, explosive instability, etc., achieve low cost, realize industrialized mass production, and promote rapid industrialization The effect of development

Inactive Publication Date: 2012-09-19
TIANJIN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the organic solvent used to prepare the ink is anhydrous hydrazine, which is highly toxic in both its vapor and liquid form and is prone to explosive instability.

Method used

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  • Preparation method of copper indium selenium sulfide thin film for solar cell
  • Preparation method of copper indium selenium sulfide thin film for solar cell
  • Preparation method of copper indium selenium sulfide thin film for solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0045] First, 0.1188 g CuCl, 0.2639 g InCl 3 4H 2 O, 0.2028 g thioacetamide was successively dissolved in 6 ml pyridine solvent, and stirred thoroughly until a pale yellow emulsion. Heating to 65 °C and stirring for 10 min, the system changed from emulsion to yellow transparent solution, and finally to blue-black precursor ink;

[0046] Secondly, the obtained blue-black ink was spin-coated, and the precursor film was coated on the soda-lime glass Mo substrate at a speed of 1500 r / min, dried in a vacuum oven for 1 min, and spin-coated once. Thin films of thin films around 500 nm are produced;

[0047] Finally, a certain thickness of the precursor film sample and selenium particles were placed in a self-made graphite box, the selenium particles were placed in the groove under the film sample, and the selenium vapor could fill the entire graphite box through the slot hole, and the graphite box was placed in a tubular in the annealing furnace, at N 2 The annealing treatment is...

Embodiment 2

[0050] First, 0.1426 g CuCl, 0.2639 g, InCl 3 4H 2 O, 0.3380 g thioacetamide was successively dissolved in 6 ml pyridine solvent, and stirred thoroughly until a pale yellow emulsion. Heating to 70 °C and stirring for 10 min, the system changed from emulsion to yellow transparent solution, and finally to blue-black precursor ink;

[0051] Secondly, the obtained blue-black ink was spin-coated, and the precursor film was coated on the soda-lime glass Mo substrate at a speed of 1500 r / min, dried in a vacuum drying oven for 1 min, and then spin-coated twice , can prepare films with different thicknesses of 1400-1500 nm;

[0052] Finally, a certain thickness of the precursor film sample and selenium particles were placed in a self-made graphite box, the selenium particles were placed in the groove under the film sample, and the selenium vapor could fill the entire graphite box through the slot hole, and the graphite box was placed in a tubular in the annealing furnace, at N 2 Th...

Embodiment 3

[0054] a) Precursor ink preparation: Dissolve Cu, In, and S-containing compounds in an appropriate amount of pyridine solvent at a Cu:In:S molar ratio of 4.8:3:12, heat to 80 °C, and stir for 15 min. Get blue-black precursor ink;

[0055] b) Precursor thin film preparation: apply the ink described in step a to coat the precursor thin film on the soda-lime glass Mo substrate by spin-coating, and then spin-coat repeatedly once to prepare a thin film with a thickness of 1000 nm;

[0056] c) Drying: Dry the precursor film prepared in step b at 80 °C for 5 min, and then spin-coat at 1500 r / min for drying;

[0057] d) Annealing treatment: performing selenization annealing treatment on the dried precursor thin film in step c to form a copper indium selenide sulfur thin film. The Cu-containing compound in step a) is CuCl, and the In-containing compound is InCl 3 4H 2 O; the sulfur-containing compound is thioacetamide, and dissolving into an appropriate amount of pyridine means reac...

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Abstract

The invention relates to a method for preparing a Culn (Se, S)2 thin film by using a non-vacuum wet chemical method, which comprises the following steps of: (a) precursor ink preparation; (b) precursor thin film preparation; (c) drying; and (d) annealing. Compared a traditional high vacuum-gas phase method, the preparation method of the copper indium selenium sulfide thin film provided by the invention has the advantages of simple process, low cost, strong repeatability, easiness in realization of large-scale production, stable raw material physicochemical property, good safety and high raw material utilization rate, and the rapid development of the copper indium selenium sulfur thin film solar cell industry can be promoted.

Description

[0001] The invention was supported by the National Natural Science Foundation of China (No. 51102180) and the Tianjin Normal University Doctoral Fund (No. 52X09007). technical field [0002] The invention belongs to the field of new energy sources of photoelectric materials, and in particular relates to a preparation method of a copper indium selenide sulfur thin film of a solar cell absorption layer. Background technique [0003] In recent years, solar cells as clean energy have developed rapidly. Thin-film solar cells will become the main development direction of solar cells due to their advantages of low cost, large-scale production, and easy integration. At present, solar cells mainly use monocrystalline silicon and thin film materials prepared under vacuum conditions, but the further promotion and application of solar cells is limited due to their high price. Therefore, the development of inexpensive photoelectric conversion materials is the key to the mass production ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032C03C17/22C03C17/36
CPCY02P70/50
Inventor 孙玉绣杜桂香
Owner TIANJIN NORMAL UNIVERSITY
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