SOI MOS transistor

Abstract

The invention provides an SOI (silicon on insulator) MOS (metal oxide semiconductor) transistor which comprises active areas, an H-shaped or T-shaped grid, a source area, a drain area, a source end body contact area and a drain end body contact area, wherein the active areas have a continuous shape and are formed in an SOI layer of an SOI substrate; the H-shaped or T-shaped grid comprises a main grid part and at least one expansion grid part; each expansion grid part is located at a tail end of the main grid part in the width direction and extends in the length direction of the main grid part; the source area and drain area are located in the active areas on the two sides of the main grid part respectively; the source end body contact area is located in the active area on one side of the source area and isolated from the source area by the expansion grid part; the drain end body contact area is located in the active area on one side of the drain area and isolated from the drain area by the expansion grid part; and if a source end body contact area and / or a drain end body contact area are arranged on the outer side of an expansion grid part, the main grid part extends a boundary exceeding the active area in the width direction at one end of the expansion grid part. The SOI MOS transistor provided by the invention can more effectively suppress the floating body effect and reduce the lateral leakage, body resistance and parasitic capacitance.

Description

technical field [0001] The invention relates to the field of semiconductor transistors, in particular to an SOI MOS transistor capable of suppressing the floating body effect of the SOI MOS (Metal Oxide Semiconductor) transistor. Background technique [0002] SOI (Silicon On Insulator) refers to silicon-on-insulator technology, and SOI technology is recognized as one of the mainstream semiconductor technologies in the 21st century. SOI technology effectively overcomes the shortage of bulk silicon materials, fully exploits the potential of silicon integrated circuit technology, and is gradually becoming the mainstream technology for manufacturing high-speed, low power consumption, high integration and high reliability VLSI. [0003] SOI MOS is divided into partially depleted SOI MOS (PDSOI) and fully depleted SOI MOS (FDSOI) according to whether the active body region is depleted. Generally speaking, the top silicon film of fully depleted SOI MOS is relatively thin, and the ...

AI Technical Summary

Problems solved by technology

[0005] refer to figure 1 and figure 2 , in the SOI MOS transistor of the H-type gate structure in the prior art, the body contact region is in body contact with the source region and the drain region at the same time, due to the lateral leakage between the source region and the body contact region and the drain region and the body contact region, A current path will be formed through the body contact region, resulting in an increase in the leakage current of the device

In turn, the poly on both sides becomes a pseudo MOS tube, which affects the overall performance of the device

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