Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor storage device

A storage device and semiconductor technology, applied in information storage, static memory, read-only memory, etc., can solve the problems of voltage drop, high-voltage VPP voltage value reduction, etc., to improve voltage accuracy, improve cycle life, and ensure yield. Effect

Active Publication Date: 2012-09-19
ROHM CO LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] While the operation of the high voltage generating circuit 62 is stopped, a current flows through the Zener diode 64, so the voltage drops, and the voltage value of the high voltage VPP drops.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor storage device
  • Semiconductor storage device
  • Semiconductor storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar symbols are attached to the same or similar parts. The drawings about the structure are schematic drawings, and may include parts in which the relationship or ratio of dimensions is different among the drawings.

[0044] figure 1 An example of the overall configuration of the semiconductor memory device of the present invention is shown. 23 is a memory cell array, 21 is a Y decoder circuit, 22 is an X decoder circuit, 24 is a sense amplifier circuit (sense amplifier circuit), 25 is a Y gate circuit, 1 is a high-voltage input-output circuit, 2 30 is a high voltage regulating circuit, and 30A is a voltage regulating circuit. The output signal of the sense amplifier circuit 24 is input to the high voltage regulation circuit 30 . The high voltage generation circuit 2 can be constituted by, for example, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor storage device which can restrain the uneven high voltage applied to the storage unit and can provide the high voltage with high precision. The semiconductor storage device includes a storage unit array (23), a Y decoder circuit (21), a X decoder circuit (22), a sense amplifier circuit (24), a Y gate circuit (25), a high voltage generating circuit (2), a high voltage regulator circuit (30), and a voltage adjusting circuit (30A). The voltage modifying data for adjusting the potential of the anode of a zener diode (25) so as to adjust the high voltage applied to the storage unit array (23) is written into the storage unit array (23). The voltage modifying data is used to adjust voltage by the voltage adjusting circuit (30A).

Description

technical field [0001] The present invention relates to a semiconductor memory device including a high voltage regulator circuit used in a memory device requiring a high voltage when erasing or writing data in an electrically rewritable memory. Background technique [0002] For example, EEPROM (Electrically Erasable Programmable Read Only Memory, Electrically Erasable Programmable Read Only Memory) or flash memory are widely used for various program storage or data storage in civil equipment or industrial equipment. A memory cell constituting an EEPROM or a flash memory injects electrons into a floating gate or emits electrons from the floating gate using tunnel current or hot electrons generated by a high voltage (for example, 15V). As a result, the threshold value of the memory cell is changed to rewrite data (for example, refer to Patent Documents 1 and 2). [0003] Figure 8 A block diagram of a conventional semiconductor memory device is shown in . A conventional semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/12G11C16/06
CPCG11C16/3404G11C16/12
Inventor 今井丈晴高木宏树
Owner ROHM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com