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Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure

A solar cell and nanotechnology, applied in the direction of nanotechnology, circuits, electrical components, etc., can solve the problems of corrosion of crystalline silicon nanocolumns, lack of masking effect, and influence on battery characteristics, so as to reduce process cost and increase process complexity , Increase the effect of process cost

Inactive Publication Date: 2012-08-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this technology has not been able to be applied to the field of solar cells
Moreover, silicon nanocrystals will be etched to cause poor masking effect, so that the masking effect will not be achieved, resulting in corrosion of crystalline silicon nanopillars, which will affect the final battery characteristics.

Method used

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  • Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure
  • Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure
  • Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure

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Embodiment Construction

[0038] In order to make the purpose, technical scheme and advantages of the present invention clearer, the following is combined with specific examples, and with reference to the accompanying drawings, and preferred embodiments, to prepare silicon-based ultra-low nanometer anti-reflection structure array heterogeneous according to the present invention. The specific implementation, structure, characteristics and efficacy of the method for junction thin film solar cells are described in detail below.

[0039] Such as figure 1 as shown, figure 1 It is a method for preparing a quasi-black silicon high-efficiency solar cell with an ultra-low nanometer anti-reflection structure provided by the present invention, the method comprising:

[0040] Step 101: performing phosphorus diffusion on the p-type solar cell silicon wafer;

[0041] Step 102: preparing nanopillars by chemical etching;

[0042] Step 103: cleaning the surface to remove residues;

[0043] Step 104: performing phos...

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Abstract

The invention discloses a manufacturing method of a quasi-black silicon high-efficiency solar cell with an ultralow nanometer reflection-reducing structure. The manufacturing method comprises the following steps of: A, carrying out phosphorus diffusion on a p-type solar cell silicon wafer; B, manufacturing a nanometer column by a chemical corrosion method; C, cleaning the surface of the nanometer column to remove residues; D, carrying out the phosphorus diffusion on a silicon wafer diffusion surface again; and E, carrying out SiNx:Hx:H surface passivation and reflection-reducing thin-film deposition on the silicon wafer to manufacture a negative electrode and a positive electrode of a solar cell, and an aluminum back surface field so as to finish the manufacturing of the quasi-black silicon high-efficiency solar cell with the ultralow nanometer reflection-reducing structure. Through the manufacturing method disclosed by the invention, the solar cell can be combined with the existing technology, and the cost of a device is not increased. Compared with a traditional solar cell, the manufactured solar cell has improved efficiency; in addition, the manufacturing method is simple and has excellent stability.

Description

technical field [0001] The invention relates to the technical field of preparing high-efficiency crystalline silicon solar cells, in particular to a method for preparing quasi-black silicon high-efficiency solar cells with an ultra-low nanometer anti-reflection structure. Background technique [0002] With the global energy shortage and climate warming, renewable energy such as solar power is replacing traditional thermal power and has become a research hotspot and development trend in the energy field today. In the development history of solar cells, both amorphous silicon thin film solar cells and crystalline silicon solar cells have experienced more than half a century of development. Crystalline silicon solar cells have higher efficiency, and amorphous silicon thin-film solar cells have lower manufacturing costs, but the combination of the two advantages to form a third-generation solar cell structure with higher efficiency and lower cost has received relatively little a...

Claims

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Application Information

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IPC IPC(8): H01L31/18B82Y40/00
CPCY02P70/50
Inventor 贾锐岳会会刘新宇叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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