Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure
A solar cell and nanotechnology, applied in the direction of nanotechnology, circuits, electrical components, etc., can solve the problems of corrosion of crystalline silicon nanocolumns, lack of masking effect, and influence on battery characteristics, so as to reduce process cost and increase process complexity , Increase the effect of process cost
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[0038] In order to make the purpose, technical scheme and advantages of the present invention clearer, the following is combined with specific examples, and with reference to the accompanying drawings, and preferred embodiments, to prepare silicon-based ultra-low nanometer anti-reflection structure array heterogeneous according to the present invention. The specific implementation, structure, characteristics and efficacy of the method for junction thin film solar cells are described in detail below.
[0039] Such as figure 1 as shown, figure 1 It is a method for preparing a quasi-black silicon high-efficiency solar cell with an ultra-low nanometer anti-reflection structure provided by the present invention, the method comprising:
[0040] Step 101: performing phosphorus diffusion on the p-type solar cell silicon wafer;
[0041] Step 102: preparing nanopillars by chemical etching;
[0042] Step 103: cleaning the surface to remove residues;
[0043] Step 104: performing phos...
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