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PZT (lead zirconate titanate)-based antiferroelectric ceramic material with low curie point and high bidirectional-adjustable dielectric electric field and preparation method thereof

A ceramic material and antiferroelectric technology, which is applied in the field of PZT-based antiferroelectric ceramic materials and its preparation, can solve problems such as unfavorable use, limited adjustable range and range, and limited shift range and range of phase transition temperature, and achieve high Dielectric constant and the effect of widening the application range

Inactive Publication Date: 2014-01-29
TONGJI UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Most of the past studies have focused on the effect of the bias electric field on the ferroelectric-ferroelectric and ferroelectric-paraelectric phase transitions. The amplitude and range of these phase transition temperatures with the electric field are generally limited, and the dielectric constant and pyroelectric The Curie point Tc where the peak of the coefficient is located is higher (T C >200℃), not conducive to use; the adjustable range and range are limited

Method used

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  • PZT (lead zirconate titanate)-based antiferroelectric ceramic material with low curie point and high bidirectional-adjustable dielectric electric field and preparation method thereof
  • PZT (lead zirconate titanate)-based antiferroelectric ceramic material with low curie point and high bidirectional-adjustable dielectric electric field and preparation method thereof
  • PZT (lead zirconate titanate)-based antiferroelectric ceramic material with low curie point and high bidirectional-adjustable dielectric electric field and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Prepared under bias electric field conditions, low Curie point T C High dielectric bidirectional tunable (Pb 0.89 Ba 0.08 La 0.02 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Antiferroelectric Ceramic Materials

[0045] According to (Pb 0.89 Ba 0.08 La 0.02 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Molar ratio, weigh Pb 3 o 4 、TiO 2 , ZrO 2 , SnO 2 、BaCO 3 and La 2 o 3 Raw materials (as shown in Table 1).

[0046] Raw material source: Pb 3 o 4 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), TiO 2 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), ZrO 2 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), SnO 2 (99.5%, Sinopharm Chemical Reagent Co., Ltd.), BaCO 3 (99.8%, Sinopharm Chemical Reagent Co., Ltd.) and La 2 o 3 (99.99%, Sinopharm Chemical Reagent Co., Ltd.).

[0047] Table 1. (Pb 0.89 Ba 0.08 La 0.02 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Raw material ratio of antiferroelectric ceramic materials

[0048] formula

Pb 3 o 4

TiO 2

ZrO 2

...

Embodiment 2

[0053] Prepared under bias electric field conditions, low Curie point T C High dielectric bidirectional tunable (Pb 0.87 Ba 0.09 La 0.03 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Antiferroelectric Ceramic Materials

[0054] According to (Pb 0.87 Ba 0.09 La 0.03 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Molar stoichiometric ratio, weigh Pb 3 o 4 、TiO 2 , ZrO 2 , SnO 2 、BaCO 3 and La 2 o 3 Raw material (concrete quality is as shown in table 2).

[0055] Raw material source: Pb 3 o 4 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), TiO 2 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), ZrO 2 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), SnO 2 (99.5%, Sinopharm Chemical Reagent Co., Ltd.), BaCO 3 (99.8%, Sinopharm Chemical Reagent Co., Ltd.) and La 2 o 3 (99.99%, Sinopharm Chemical Reagent Co., Ltd.).

[0056] Table 2. (Pb 0.87 Ba 0.09 La 0.03 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Raw material ratio of antiferroelectric ceramic materials

[0057] formula

Pb 3 ...

Embodiment 3

[0063] Prepared under bias electric field conditions, low Curie point T C High dielectric bidirectional tunable (Pb 0.85 Ba 0.11 La 0.03 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Antiferroelectric Ceramic Materials

[0064] According to (Pb 0.85 Ba 0.11 La 0.03 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Molar ratio, weigh Pb 3 o 4 、TiO 2 , ZrO 2 , SnO 2 、BaCO 3 and La 2 o 3 Raw materials (as shown in Table 3).

[0065] Raw material source: Pb 3 o 4 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), TiO 2 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), ZrO 2 (99.0%, Sinopharm Chemical Reagent Co., Ltd.), SnO 2 (99.5%, Sinopharm Chemical Reagent Co., Ltd.), BaCO 3 (99.8%, Sinopharm Chemical Reagent Co., Ltd.) and La 2 o 3 (99.99%, Sinopharm Chemical Reagent Co., Ltd.).

[0066] Table 3. (Pb 0.85 Ba 0.11 La 0.03 )(Zr 0.51 sn 0.39 Ti 0.10 )O 3 Raw material ratio of antiferroelectric ceramic materials

[0067] formula

Pb 3 o 4

TiO 2

ZrO 2

...

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Abstract

The invention relates to a PZT (lead zirconate titanate)-based antiferroelectric ceramic material with low curie point TC and a high bidirectional-adjustable dielectric electric field and a preparation method thereof and belongs to the technical fields of electronic materials and devices. The chemical general formula of the PZT-based antiferroelectric ceramic material with bidirectional adjustability of a dielectric electric field is (Pb[0.99-x-y]BaxLay)(Zr0.51Sn 0.39Ti0.10)O3, wherein x is larger than 0 and less than or equal to 0.20, and y is larger than 0 and less than or equal to 0.06. The PZT-based antiferroelectric ceramic material with dielectric bidirectional adjustability has high dielectric coefficient and low dielectric loss under a certain bias voltage in the vicinity of low curie point TC, and the dielectric coefficient is increased and then decreased along with the increase of the bias voltage; the PZT-based antiferroelectric ceramic material has bidirectional dielectric adjustability, simultaneously has high pyroelectric coefficient and pyroelectric current, and can be widely used in the fields of microelectronics, computers, capacitors, sensors, aerospace technologies and the like.

Description

technical field [0001] The present invention relates to a kind of low Curie point T C The high dielectric electric field bidirectionally adjustable PZT-based antiferroelectric ceramic material and its preparation belong to the technical field of electronic materials and devices. Background technique [0002] Antiferroelectrics are a kind of ferroelectric materials, and the research on antiferroelectrics is also inseparable from the response of spontaneous polarization to the outside world. Unlike ferroelectrics, antiferroelectrics have zero macroscopic polarization due to the antiparallel arrangement of the spontaneous polarization directions of adjacent sublattices in the structure, but antiferroelectrics can be induced to ferroelectricity under the action of an electric field body. Compared with the change of the polarization of ferroelectrics, the change of polarization caused by the phase transition of antiferroelectric-ferroelectric structure under the action of elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/493C04B35/622
Inventor 杨同青王瑾菲郑琼娜姚熹
Owner TONGJI UNIV
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