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WLP (wafer level package) IRFPA (infrared focal plane array) device and manufacturing method thereof

A device manufacturing method and infrared focal plane technology, which are applied in instruments, measuring devices, scientific instruments, etc., can solve the problems of unfavorable popularization and application of infrared focal plane array devices, low infrared absorption efficiency, complex manufacturing process, etc., and achieve high detection accuracy. , compact structure, the effect of improving performance

Active Publication Date: 2012-08-01
中科微光子科技成都有限公司
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  • Description
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AI Technical Summary

Problems solved by technology

The infrared absorption efficiency of the focal plane array of this structure is low, the device performance is poor, and the manufacturing process is complicated, which will make the manufacturing cost higher, which is not conducive to the popularization and application of infrared focal plane array devices.

Method used

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  • WLP (wafer level package) IRFPA (infrared focal plane array) device and manufacturing method thereof
  • WLP (wafer level package) IRFPA (infrared focal plane array) device and manufacturing method thereof
  • WLP (wafer level package) IRFPA (infrared focal plane array) device and manufacturing method thereof

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Embodiment Construction

[0039] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0040] Such as Figure 1~Figure 10 As shown: the present invention includes a first substrate 101, a buried sacrificial layer 102, a process barrier layer 103, an infrared absorbing layer 104, an insulating beam 105, a deformable beam 106, a refractive medium layer 107, a heat dissipation frame body 108, a reflective layer 109, Antireflection layer 110 , getter 111 , first substrate solder 112 , cavity 113 , microlens 114 , second substrate 201 and second substrate solder 202 .

[0041] Such as figure 1 and Figure 10 As shown: the present invention includes a first substrate 101 and a second substrate 201 located below the first substrate 101, the material of the first substrate 101 includes single crystal silicon, Ge, GaAs or GeSi; the first substrate 101 is concavely provided with grooves, figure 1 and Figure 10 shows a schematic structural diagram o...

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Abstract

The invention relates to a WLP (wafer level package) IRFPA (infrared focal plane array) device and the manufacturing method thereof. The device includes a first substrate and a second substrate, wherein at least a groove is arranged in the first substrate; processing blocking layers cover the inner wall of the groove and the surface of the first substrate; a resonance absorption structure is arranged at the groove mouth of the groove, and includes an infrared absorption layer and a reflective layer; the reflective layer is adjacent to the second substrate; a refracting medium layer is arranged between the infrared absorption layer and the reflective layer; a deformation beam, a thermal insulation beam, a heat dissipation frame body and a getter are sequentially arranged on the outer ring of the resonance absorption structure; the heat dissipation frame body is correspondingly connected and matched with the resonance absorption structure through the thermal insulation beam and the deformation beam; a first substrate solder is arranged on the outer ring of the getter and corresponds to second substrate solder on the second substrate; and the first substrate and the second substrate are fixed and connected into a whole through the first substrate solder and the second substrate solder via vacuum welding. The device provided by the invention has the advantages of compact structure, compatibility with the IC process, high detection precision and convenience for manufacture.

Description

technical field [0001] The invention relates to an infrared focal plane array device and a preparation method thereof, in particular to a wafer-level packaged infrared focal plane array device and a manufacturing method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Infrared imaging technology is widely used in military, industrial, agricultural, medical, forest fire prevention, environmental protection and other fields. Its core component is the Infrared Focal Plane Array (IRFPA). According to the working principle of infrared focal plane array, it can be divided into: photon infrared detector and uncooled infrared detector. Photon-type infrared detectors use narrow-bandgap semiconductor materials, such as HgCdTe, InSb, etc., and use the photoelectric effect to realize the conversion of infrared light signals into electrical signals; therefore, they need to work at a temperature of 77K or lower, which requires bulky and com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/10G01J5/02
Inventor 欧文
Owner 中科微光子科技成都有限公司
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