Transfer method of large area graphene

A transfer method, graphene technology, applied in coating, gaseous chemical plating, metal material coating process and other directions, to achieve the effect of simple method, saving production cost and avoiding pollution

Inactive Publication Date: 2012-07-18
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(Bae S, Kim H, Lee Y, et al Roll-to-roll production of 30-inch graphene films for transparent electrodes[J]. Nature Nanotechnology, 2010, 5(8): 574-578.) Although this method can Large-area transfer of graphene is achieved, but repeated transfers will inevitably introduce glue pollution, and the metal substrate must be completely corroded to achieve graphene transfer

Method used

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  • Transfer method of large area graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0038] The method for transferring the graphene film on the metal copper substrate to the quartz substrate comprises the following steps:

[0039] (1) The spraying concentration of 1mol / L FeCl is sprayed on the graphene film of the Cu substrate by spray gun spraying 3 solution, which weakens the adhesion between the graphene film and the copper substrate;

[0040] (2) putting the copper-based graphene film processed in step (1) into deionized water and soaking at room temperature for 5 minutes, and washing away the residual corrosion solution;

[0041] (3) after step (2) washes off residual corrosion solution, the graphene film of copper base is vertically put into the water tank that fills deionized water, makes the sample both sides all have the water that thickness is 0.5cm; Put the water tank with the sample in the freezer, keep the temperature of the freezer at about -10°C, and make the water with a thickness of 0.5 cm on both sides of the sample condense into ice;

[0...

Embodiment 2

[0046] Transfer of graphene films from copper substrates to SiO 2 / Si substrate,

[0047] The specific steps are similar to Example 1, but the target substrate used is SiO 2 / Si substrate, and repeat steps (1)-(5), the graphene of double-layer quartz substrate can be obtained.

Embodiment 3

[0049] Transfer of graphene films from copper substrates to TiO 2 base,

[0050] The specific steps are similar to Example 1, but the target substrate used is TiO 2 Substrate, and repeat steps (1)-(5) 2 times, can get to the graphene of three layers.

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Abstract

The invention relates to a transfer method of large area graphene. The transfer method comprises the following steps of: utilizing an etching solution to impair bonding force between a graphene film and a copper base on the graphene film on a metal base, and placing the metal base in water after water washing; causing one side of the metal base in contact with the graphene film to have water of a certain thickness, and placing the metal base in a freezing chamber to freeze; and isolating a graphene ice layer and transferring to a target substrate, and achieving transfer of the graphene after ice is melted. The transfer method provided by the invention adopts ice as a carrier, so that the method is simple, and omits the multifarious steps such as glue coating, metal dissolution and glue eliminating glue in the existing method; and avoids pollution caused by organic adhesive residue and a metal dissolution liquid on the graphene in the existing method, and is suitable for large-scale application and production of the graphene film.

Description

technical field [0001] The invention relates to a graphene transfer method, in particular to a simple, non-damaging and economical method for transferring a large-area graphene film from the surface of a metal substrate to the surface of a target substrate, and belongs to the technical field of new materials and semiconductor preparation techniques. Background technique [0002] Graphene is a new type of carbon thin film material arranged in a hexagonal network structure by a single layer of carbon atoms. The electron and hole (Hole) carrier mobility in single-layer graphene is expected to reach 100 times that of silicon (Si) at room temperature, that is, 200,000 cm 2 / Vs, can withstand 100 million to 200 million A / cm 2 The current density, which is about 100 times that of copper tolerance. At the same time, single-layer graphene has a light transmittance as high as 97.7%, which is not only for visible light, but also for most infrared rays. Therefore, graphene is expecte...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/00C23C16/01
Inventor 许士才满宝元姜守振刘杰杨诚刘玫范秀伟
Owner SHANDONG NORMAL UNIV
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