Method for adjusting diameter of silicon nanometer hole

A technology of pore size adjustment and silicon nano-technology, which is applied in the process of producing decorative surface effects, decorative art, gaseous chemical plating, etc., can solve the problems of large hole size deviation, waste of nano-optical devices, poor flexibility, etc., to achieve The effect of meeting the design requirements

Active Publication Date: 2012-07-18
UNITED MICROELECTRONICS CENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this compensation method not only has poor flexibility, but also has different deviation values ​​caused by different structures and different process conditions, so it is very difficult to accurately estimate the deviation, which easily causes secondary deviation in compensation.
[0004] In some applications with very strict size requirements, such as nano-optical devices, if the prepared holes have large deviations in size, the nano-optical devices with large deviations can only be wasted as defective products

Method used

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  • Method for adjusting diameter of silicon nanometer hole
  • Method for adjusting diameter of silicon nanometer hole
  • Method for adjusting diameter of silicon nanometer hole

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] first step, such as figure 1 As shown, a layer of electron beam photoresist 2 is spin-coated on the front side of a silicon substrate 1 with a thickness of 500 microns. The positive resist ZEP-520A was selected as the electron beam photoresist 2, and the resist was spun for 60 seconds at a rotational speed of 4000 rpm, and the thickness of the resist was measured to be 300 nm.

[0040] In the second step, a pattern of circular holes with a diameter of 200 nm is designed, and an electron beam exposure device is used to expose the pattern of circular holes on the photoresist 2 . Electron beam acceleration voltage is 100KV, exposure dose is 270μC / cm 2 . Then put the silicon substrate 1 together with the photoresist 2 into the developer solution "Amyl Acetate" for 2 minutes, and then put it into IPA for fixing for 1 minute.

[0041] In the third step, the pattern on the photoresist 2 is transferred to the silicon substrate 1 by etching, and the remaining photoresist 2 is...

Embodiment 2

[0058] The first step, with embodiment 1

[0059] The second step is to design a circular hole layout with a diameter of 300nm, and use electron beam exposure equipment to expose the circular hole pattern on the photoresist. Electron beam acceleration voltage is 100KV, exposure dose is 240μC / cm 2 . Then put the silicon substrate 1 together with the photoresist 2 into the developer solution "Amyl Acetate" for 2 minutes, and then put it into IPA for fixing for 1 minute.

[0060] The 3rd step, with embodiment 1

[0061] The fourth step is to measure the size of the prepared silicon nanoholes through an electron microscope. The measured diameter D1 of the silicon nanoholes is 230nm, and the expected value D2 is 300nm. At this time, D2>D1, Δ=D2-D1=70nm.

[0062] In the fifth step, the silicon substrate 1 is put into a high temperature oxidation furnace for oxidation. Dry oxidation was carried out in an oxygen atmosphere at 1000°C. According to the Dill-Grove model, the control...

Embodiment 3

[0066] The first step is to measure the size of the prepared silicon nanoholes through an electron microscope. The measured diameter D1 of the silicon nanoholes is 280nm, and the expected value D2 is 200nm. At this time, D1>D2, Δ=D1-D2=80nm.

[0067] In the second step, put the silicon substrate 1 into a high temperature oxidation furnace for oxidation. Dry oxidation was carried out in an oxygen atmosphere at 1000°C. According to the Dill-Grove model, the control oxidation time is 1 hour and 50 minutes, at this time figure 2 The thickness of the silicon layer 4 consumed by thermal oxidation is r=31nm, ie: r=(Δ / 2)×(44 / 56)=(80 / 2)×(44 / 56)=31nm.

[0068] After the thermal oxidation is completed, it is obtained as image 3 The silicon dioxide layer 5 generated by thermal oxidation shown in . The silicon dioxide layer 5 generated by thermal oxidation makes the silicon nanopore extend from the boundary 6 of the original hole before thermal oxidation to the inside of the hole by Δ...

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Abstract

The invention belongs to the technical field of processing and preparation of silicon nanometer holes, and particularly relates to a method for adjusting diameter of a silicon nanometer hole. The method comprises the steps as follows: measuring the diameter of the silicon nanometer hole; and calculating the difference delta of the diameter and an expected value, if the diameter is greater than the expected value, a device provided with the silicon nanometer hole is heated and oxidized to ensure that the thickness r of silicon that is oxidized equals to (delta/2)*(44/56), then detection is carried out to ensure that whether the diameter of the silicon nanometer hole reaches the expected value or not until the a hole with an expected diameter is obtained, however, if the diameter is smaller than the expected value, the device provided with the silicon nanometer hole is heated and oxidized to ensure that the thickness of silicon that is oxidized equals to delta/2, then a generated silicon dioxide layer is corroded by hydrofluoric acid solution, and finally then detection is carried out to ensure that whether the diameter of the silicon nanometer hole reaches the expected value or not until the a hole with an expected diameter is obtained. By adopting the method, the size of the silicon nanometer hole can be adjusted accurately, and repeated adjustment can be realized, so that design requirements can be met conveniently.

Description

technical field [0001] The invention belongs to the technical field of processing and preparation of silicon nanoholes, and in particular relates to a method for adjusting the diameter of silicon nanoholes. Background technique [0002] With the development of micro-nano processing technology, the achievable structure size is getting smaller and smaller, and the processing precision is getting higher and higher. However, any preparation method has errors, especially the structure that needs to be realized through multi-step processing technology, and the experimental results are very different from the design expectations. Although various methods are used to optimize the process parameters to minimize the error, the size deviation caused by the preparation process is still inevitable. [0003] Taking the most commonly used MEMS nanopore processing technology as an example, the preparation process generally includes at least a photolithography process and an etching process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 冯俊波郭进滕婕宋世娇
Owner UNITED MICROELECTRONICS CENT CO LTD
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