LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof

An epitaxial layer and deep well technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as process defects and unclean silicon dioxide grinding, and achieve the effect of reducing process defects

Active Publication Date: 2012-07-11
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the subsequent chemical mechanical polishing (CMP), due to the existence of the high steps, the silicon dioxide near the drift region is not cleaned, resulting in process defects

Method used

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  • LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
  • LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof
  • LDMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof

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Experimental program
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Embodiment 1

[0041] As mentioned in the background technology section, in the manufacturing process of LDMOS devices, the LOCOS process is often used to form a field oxide layer above the drift region, and the field oxide layer is generally used as an isolation layer for devices in the active region (mostly high-voltage devices). However, the field oxide layer formed by the LOCOS process is difficult to apply to the process of 0.18 μm and below 0.18 μm due to the limitation of the “bird’s beak” effect; and after the field oxide layer is formed above the drift region, the field oxide layer About half of the thickness of the substrate is higher than the surface of the substrate, so a step is formed. The existence of the step prevents the subsequent CMP process from planarizing the substrate, resulting in process defects.

[0042] Based on this, the present invention provides a kind of LDMOS device manufacturing method, with reference to figure 1 , the method specifically includes the followi...

Embodiment 2

[0055] The LDMOS device manufacturing method provided by the present invention is described in detail below with a specific embodiment, refer to figure 2 , the method specifically includes the following steps:

[0056] Step S11: providing a substrate, the substrate includes a body layer, an epitaxial layer, and a deep well region in the epitaxial layer.

[0057] The "in the epitaxial layer" mentioned in this embodiment refers to a region extending downward from the surface of the epitaxial layer to a certain depth, which belongs to a part of the epitaxial layer; the "on the epitaxial layer" refers to the region upward from the surface of the epitaxial layer , this region does not belong to the epitaxial layer itself, and the meanings expressed in other descriptions can also be deduced by analogy.

[0058] refer to image 3 , the figure shows a body layer 100 , an epitaxial layer 101 on the body layer 100 and a deep well region 102 in the epitaxial layer 101 .

[0059] In t...

Embodiment 3

[0087] The present invention also provides a kind of LDMOS device, refer to Figure 8 , the LDMOS device includes: a base, the base includes a body layer 100, an epitaxial layer 101, and a deep well region 102 located in the epitaxial layer 101; a first shallow trench dielectric layer 108 located in the deep well region 102 and The second shallow trench dielectric layer 109 .

[0088] The depths of the first shallow trench dielectric layer 108 and the second shallow trench dielectric layer 109 are both 100nm, and the sidewalls of the first shallow trench dielectric layer 108 and the second shallow trench dielectric layer 109 and the epitaxial The angle between the surface of the layer 101 is 80°-90°.

[0089] The formation process of the first shallow trench dielectric layer 108 and the second shallow trench dielectric layer 109 in the embodiment of the present invention is as follows: first, an isolation dielectric layer, a hard mask layer and an anti-reflection layer are se...

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Abstract

The embodiment of the invention discloses an LDMOS device and a manufacture method of the device. The method comprises providing a substrate including a body layer, an epitaxial layer and a deep well region located in the epitaxial layer; sequentially forming an isolation medium layer and a hard mask layer on the epitaxial layer; forming a shallow trench in the deep well region in the epitaxial layer by using a mask with a drift region pattern; and forming a shallow trench medium layer in the shallow trench. The LDMOS device manufacture method provided by the invention can manufacture devices with a key dimension of 0.18 mum or below, and can realize global planarization of the substrate surface when carrying out subsequent CMP (chemical mechanical polishing) process, thereby reducing the occurrence of process defects.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, relates to an LDMOS device and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, LDMOS (Lateral Double-diffuse MOS) devices are widely used in mobile phones due to their good short channel characteristics, especially in 900MHz in cellular phones. With the continuous growth of the mobile communication market (especially the cellular communication market), the manufacturing process of LDMOS devices is becoming more and more mature. [0003] In a conventional process, the formation process of an LDMOS device includes: forming a drift region and an active region on a substrate. Wherein, the local oxidation of silicon (LOCOS) process is generally used to form a field oxide layer as an isolation layer above the drift region, which specifically includes the following steps: [0004] 1. ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/762H01L29/78H01L29/06
CPCH01L29/66659H01L21/76224H01L29/0653H01L29/0847H01L29/7835
Inventor 韩广涛孙贵鹏林峰马春霞黄枫
Owner CSMC TECH FAB2 CO LTD
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