Method for thermally synthesizing Cu2ZnSnS4 semiconductor material by solvent through microwaves

Abstract

The invention discloses a method for thermally synthesizing a Cu2ZnSnS4 (CZTS) semiconductor material by a solvent through microwaves. The method comprises the following steps of: adding copper salt, zinc salt, tin salt and a sulphur source into a beaker according to a preset molar ratio, adding the solvent, mixing uniformly and pouring the mixture into a reaction kettle, and placing the reaction kettle into a microwave field for heating after being closed, keeping the rated temperature for rated time after the temperature is raised to the rated temperature, and performing centrifugation, washing and vacuum drying on an obtained product to obtain the Cu2ZnSnS4 semiconductor material. The solvent can be one or more of water, glycol, ethanediamine and diamine, and the sulphur source can be sulfourea or sulphur powder. In the method, the Cu2ZnSnS4 semiconductor material prepared by the microwave-assisted solvent thermal synthesis process has high purity, and has the advantages of high synthesis speed, simple reaction device, low cost and easiness in process control.

Description

Technical field: [0001] The present invention relates to a Cu 2 ZnSnS 4 (CZTS) microwave solvothermal synthesis process of semiconductor materials, the synthesized semiconductor materials can be used in the fields of solar cells and photoelectric sensors. Background technique: [0002] Cu 2 ZnSnS 4 Semiconductor materials can be used in the development and production of CZTS series thin film solar cells and related photoelectric conversion devices. Currently commonly used Cu 2 ZnSnS 4 The synthesis methods of semiconductor materials include vacuum thermal evaporation method, electron beam evaporation method, sputtering method, spray pyrolysis method, electrodeposition method, sol-gel method and molecular beam epitaxy method, etc. Some of them require relatively high reaction conditions. Harsh, high requirements on equipment, high reaction cost, cumbersome and difficult-to-control process, and other slow reaction speeds, which require a long period of reaction under hig...

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Problems solved by technology

Currently commonly used Cu 2 ZnSnS 4 The synthesis methods of semiconductor materials include vacuum thermal evaporation method, electron beam evaporation method, sputtering method, spray pyrolysis method, electrodeposition method, sol-gel method and molecular beam epitaxy method, etc. Some of them require relatively high reaction conditions. Harsh, high requirements on equipment, high reaction cost, complicated and difficult to control process, and other slow reaction speeds, which require a long period of reaction under high temperature and high pressure to obtain

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