Silicon PIN neutron dose detector and manufacture method thereof

Abstract

The invention discloses a silicon PIN neutron dose detector and a manufacture method thereof. The silicon PIN neutron dose detector comprises a high-resistance silicon chip, as well as a P type active area and an N type active area, which are respectively positioned on the front surface and the back surface of the silicon chip, wherein one of the active areas is circular, and the other active area is annular. According to the silicon PIN neutron dose detector disclosed by the invention, the P type active area and the N type active area are designed into of an upper and down asymmetric structure, so that the distance between the P area and the N area is greater than the thickness of the silicon chip, the distance between the two active areas is effectively increased, namely the effective thickness of an I region of the detector is increased, and the restriction of the thickness of the silicon chip on the thickness of the I region of a PIN tube is also broken through. In addition, the annular active area can generate more uniform current distribution through the symmetry of the structure of the annular active area.

Description

technical field [0001] The invention relates to a silicon PIN neutron dose detector used in neutron dose detection, in particular to a silicon PIN neutron dose detector used in nuclear detection with higher performance requirements and a preparation method thereof. Background technique [0002] Neutron dose detection is the use of fast neutrons to irradiate silicon materials to cause defects inside the silicon lattice. The lattice defects will act as effective recombination centers to reduce the lifetime of minority carriers, thereby changing the voltage and current characteristics of silicon devices. Detect changes in the voltage and current characteristics of silicon devices to reflect the total dose of neutron radiation it receives over a period of time. [0003] Since the 1960s, silicon PIN detectors have been developed and applied to nuclear physics detection. The basic structure of the silicon PIN neutron dose detector is as follows: figure 1 As shown, a high-resista...

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Problems solved by technology

[0005] Although silicon PIN detectors have the advantages described above, the above-mentioned silicon PIN detectors also have drawbacks

Published experimental research results show that the sensitivity of neutron detection depends on the distance between the P region and the N region, that is, the thickness of the I region, which requires a larger thickness of the silicon substrate, so that the above silicon neutron dose detection The sensitivity of the device is limited by the thickness of the silicon substrate, while increasing the production cost and process difficulty

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