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Nanometer silver transparent electrode material and preparation method thereof

A technology of transparent electrodes and nano-silver, which is used in cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems of poor adhesion of substrate materials, easy damage to transparent electrodes, and low surface flatness of transparent electrodes. Achieve the effect of low cost, good conductivity and excellent light transmittance

Active Publication Date: 2013-08-28
JIANGSU NANOWELL ADVANCED MATERIALS SCI&TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

from figure 2 It can be seen that the surface flatness of the transparent electrode disclosed in Chinese patent 200680038150.5 is not high, although the Smooth Nanowire / Polymer Composite Transparent Electrodes document has improved the surface flatness of the transparent electrode, but the structure reported in this article is PEDOT:PSS The base material does not have good adhesion, and the surface is easily damaged, resulting in the ineffectiveness of the entire transparent electrode.
In addition, from the Smooth Nanowire / Polymer Composite Transparent Electrodes literature, it can be seen that the silver nanowire structure network is transferred to PEDOT:PSS by imprinting, and the surface is still not smooth enough.

Method used

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  • Nanometer silver transparent electrode material and preparation method thereof
  • Nanometer silver transparent electrode material and preparation method thereof
  • Nanometer silver transparent electrode material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1, with reference to figure 1 , 3 , 4.

[0047] 1. Coating silicone release agent on PET film to make release film;

[0048] 2. Evenly coat the 2.5% dispersion (mass concentration) of nano-silver wires with a diameter of 55nm±11 and a length of 15±12μm on the release film A, and bake at 100°C for 30min. Form a layer of uniform nano-silver wire network 1;

[0049] 3. Apply 2% mass concentration of PEDOT:PSS aqueous solution evenly on the silver nano wire network formed in step 2, and heat to 130°C and bake for 30-60min to form a certain thickness of PEDOT:PSS conductive polymer layer 2;

[0050] 4. Prepare PEDOT:PSS conductive polymer layer 2 in step 3 and coat a mixture of polyurethane and polyurethane curing agent, then place polyolefin base material 4 on top of the mixture, heat to 150°C and bake for 30 minutes , the polyurethane is fully cured to form an adhesion-promoting layer 3 with good binding force; thus, a transparent conductive film is formed,...

Embodiment 2

[0052] Embodiment 2, with reference to figure 1 , 3 , 5.

[0053] 1. Coating silicone release agent on PI film to make release film;

[0054] 2. Evenly coat the 5% dispersion (mass concentration) of nano-silver wires with a diameter of 85nm±17 and a length of 25±20μm on the release film A, and bake at 120°C for 60min. Form a layer of uniform nano-silver wire network 1;

[0055] 3. Apply 3% mass concentration of PEDOT:PSS aqueous solution evenly on the silver nanowire network formed in step 2, and heat to 150°C and bake for 30-60min to form a certain thickness of PEDOT:PSS conductive polymer layer 2;

[0056] 4. Prepare a layer of thermoplastic polyester resin solution on the PEDOT:PSS conductive polymer layer 2 prepared in step 3, then place the PI base material 4 on top of the mixture, heat and pressurize to 170°C and bake for 30 minutes, The thermoplastic polyester resin is fully cured to form an adhesion-promoting layer 3 with good bonding force; thus, a transparent co...

Embodiment 3

[0058] Embodiment 3, with reference to figure 1 , 3 6.

[0059] 1. Coating silicone release agent on PE film to make release film;

[0060] 2. Evenly coat the 4.5% dispersion (mass concentration) of nano-silver wires with a diameter of 120nm±20 and a length of 32±28μm on the release film A, and bake at 100°C for 30min, and then put it on the release film A Form a layer of uniform nano-silver wire network 1;

[0061] 3. Apply 1% PEDOT:PSS aqueous solution evenly to the silver nanowire network formed in step 2, and heat to 130°C and bake for 30-60min to form a certain thickness of PEDOT:PSS conductive polymer layer 2;

[0062] 4. Prepare PEDOT in step 3: the PSS conductive polymer layer is coated with a mixture of thermosetting epoxy resin and curing agent with good bendability, and then the PET base material 4 is placed on the mixture and heated to Bake at 120°C for 30 minutes to fully cure the thermosetting epoxy resin to form an adhesion-promoting layer 4 with good adhes...

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Abstract

The invention discloses a nanometer silver transparent electrode material and a preparation method thereof. The nanometer silver transparent electrode material comprises the following four layers of structures: 1 a nanometer silver wire network, 2 poly(3,4-ethylenedioxythiophene) (PEDOT): an electricity conductive high molecular layer formed by evenly coating PSS aqueous solution, 3 a high molecular material tackifying layer and 4 a substrate. The nanometer silver wire transparent electrode is high in light transmitting rate, low in resistance, good in adhesion between the electricity conductive layer and the substrate, high in surface flatness degree, simple in preparation process and convenient for large-scale production and overcomes the shortcomings of being complex in a process for preparing the nanometer silver wire transparent electrode through a transfer method and not suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of preparation of transparent electrode materials, in particular to a nano-silver transparent electrode material and a preparation method thereof. Background technique [0002] ITO (Indium Tin Oxide) is currently the most widely used transparent electrode material, used in thin-film solar cells, flat panel displays, touch screens, PDP displays, OLED displays, and e-books and other related technologies. ITO is an N-type oxide semiconductor-indium tin oxide, and the ITO thin film is an indium tin oxide semiconductor transparent conductive film. The two most critical indicators for evaluating the quality of an ITO thin film are light transmittance and electrical conductivity. In, with Sn-doped In 2 o 3 (ITO) film has the highest transmittance and the best conductivity, among which the light transmittance is over 90%, and the conductivity can reach 10-100ohm / sq while the light transmittance is 90%. In ITO, its light tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00
Inventor 姜清奎常振宇丁渐宝
Owner JIANGSU NANOWELL ADVANCED MATERIALS SCI&TECH
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