Preparation method of nano semiconductor material loaded on silicate substrate

A nano-semiconductor and silicate technology, which is applied in the field of preparation of nano-semiconductor materials, can solve the problems that the effect of purifying air cannot be fully exerted, and achieve the effects of easy large-scale production, easy availability of raw materials, and good photocatalytic effect

Active Publication Date: 2013-09-04
长沙标朗住工科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first object of the present invention is to provide a nano-semiconductor material loaded on a silicate base in order to overcome the defect that the effect of purifying air cannot be fully brought into play when silicate minerals and titanium salts are used separately. Silicate minerals and titanium salts are effectively combined to catalyze and decompose under visible light conditions, making it fully play the role of purifying the air

Method used

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  • Preparation method of nano semiconductor material loaded on silicate substrate
  • Preparation method of nano semiconductor material loaded on silicate substrate

Examples

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Effect test

Embodiment 1

[0033] (1) Add 5ml of sodium carbonate solution with a concentration of 15% to 100g of diatomite with a particle size of 20-50μm, mix well, and then transfer to a reaction kettle for roasting and puffing. The roasting temperature is 500°C, and the pressure in the kettle is 1MPa, the roasting time is 10min. After the calcination, the calcination product is taken out and cooled to room temperature, ground and sieved, and the sieved particle size ranges from 0.5 to 30 μm to obtain a powdery diatomite-based carrier.

[0034] (2) Take 30g of absolute ethanol and 20g of butyl titanate in a container, stir and mix together to form a mixed solution, and add 2g of acetylacetone solution and 10g of 20% ethanol solution to the mixed solution in turn while stirring , After adding all the acetylacetone solution and ethanol aqueous solution, continue to stir for 4 hours to obtain a stable, uniform and transparent light yellow sol, which is left to stand for 12 hours before use.

[0035] (3...

Embodiment 2

[0037] (1) Add 5ml of potassium hydroxide solution with a concentration of 20% to 100g of zeolite with a particle size of 20-50μm, mix well, then transfer to a reaction kettle for roasting and puffing, the roasting temperature is 650°C, and the pressure inside the kettle is 0.8 MPa, the roasting time is 5min. After the calcination, the calcination is taken out and cooled to room temperature, ground and sieved, and the sieved particle size ranges from 0.5 to 30 μm to obtain a powdery zeolite-based carrier.

[0038] (2) Take 80g of absolute ethanol and 20g of titanyl sulfate in a container, stir and mix them together with a stirrer to form a mixed solution, and then add 6g of glacial acetic acid solution and 24g of 20% concentration of acetic acid to the mixed solution while stirring. After all the ethanol solution, acetylacetone solution and ethanol water solution were added, the stirring was continued for 6 hours to obtain a stable, uniform and transparent light yellow sol, wh...

Embodiment 3

[0041] (1) Add 5ml of 20% sodium bicarbonate solution to the silicate mixture containing 80g of diatomite with a particle size of 20-50μm and 70g of vermiculite with a particle size of 20-50μm, mix well, and then transfer Carry out roasting and puffing in the reaction kettle, the roasting temperature is 850° C., the pressure inside the kettle is 1.3 MPa, and the roasting time is 3 minutes. After the calcination, the calcination is taken out and cooled to room temperature, ground and sieved, and the sieved particle size ranges from 0.5 to 30 μm to obtain a powdered silicate carrier.

[0042] (2) Take 40g of absolute ethanol and 20g of butyl titanate in a container, stir and mix them together with a stirrer to form a mixed solution, and then add 4g of acetylacetone solution, 20g of 20% concentration to the mixed solution while stirring After all the ethanol solution, acetylacetone solution and ethanol aqueous solution were added, the stirring was continued for 8 hours to obtain ...

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Abstract

The invention provides a nano semiconductor material loaded on a silicate substrate, which has an excellent air purifying action. The semiconductor material comprises the silicate substrate, wherein a nano TiO2 thin film is attached on the surface of the silicate substrate. The preparation method of the semiconductor material comprises the steps of: preparing a carrier material with one or more silicates as raw materials, preparing a sol with a titanium salt as a precursor, loading the sol containing a photoactive compound on the carrier by an immersion method, drying and calcining. The semiconductor material effectively combines the silicate mineral and titanium salt, and is catalytically decomposed under a visible light condition so as to sufficiently exert the air purifying action.

Description

technical field [0001] The invention relates to a preparation method of a material used for purifying air, in particular to a preparation method of a nanometer semiconductor material loaded on a silicate base. Background technique [0002] With the development of science and technology and the improvement of people's material living standards, the environment on which human beings depend has been severely damaged, and the indoor air pollution has become more and more serious, especially the harmful organic substances in cigarette smoke. It is a threat to human health, so materials with the function of purifying indoor air are getting more and more attention. [0003] Zeolite, diatomaceous earth, attapulgite, vermiculite, perlite and other natural silicate minerals have physical adsorption and ion exchange functions, and have good adsorption effects on toxic and harmful gases in the air, but cannot adsorb toxic gases. Harmful decomposition; nano-titanium dioxide can catalyze...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J20/10B01J20/30B01J21/06B01D53/02B01D53/86
Inventor 徐海李书耘李风翠许慧李慧芳伍海波张强
Owner 长沙标朗住工科技有限公司
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