Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation

Abstract

The invention discloses a radio-frequency ultra-wideband low-noise amplifier based on inductance compensation, relating to a radio-frequency integrated circuit technology. The radio-frequency ultra-wideband low-noise amplifier mainly consists of an input amplification-stage circuit, a feedback-stage circuit, a matching-stage circuit, a load-stage circuit, a bias-stage circuit and an output buffering-stage circuit jointly. According to the radio-frequency ultra-wideband low-noise amplifier, both the input matching stage and the load stage are subjected to inductance compensation, and the sensitivity of the low-noise amplifier on the technology is reduced by adopting a current multiplexing technology with independent bias, so that the performance is more stable, the ultra-wideband is also realized, and the working frequency range is 0.1-12GHz; meanwhile, the radio-frequency ultra-wideband low-noise amplifier gets favorable indexes, such as noise, linearity, gain, power consumption and the like and is suitable for an ultra-wideband multi-standard wireless communication receiving system.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, is applied to a radio frequency front end of a receiver, is an ultra-wideband low-noise amplifier applicable to various wireless communication standards, and is suitable for an ultra-wideband receiver system. Background technique [0002] With the development of the electronic information industry, circuit integration has become a common research direction for talents in the microelectronics industry, and the position of radio frequency chips in the communication field is irreplaceable. In the radio frequency receiver, the low noise amplifier is generally used as the first stage of the receiver, and its operating frequency is often very high, and the reflection characteristics of the wave need to be considered; at the same time, the low noise amplifier needs to provide enough gain to overcome the noise caused by the subsequent circuit. The quality of the noise ch...

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Problems solved by technology

[0008] Traditional wideband LNAs such as figure 1 As shown, the circuit is a broadband low-noise amplifier with an active feedback structure (the NMOS transistor of the following device is represented by MN, and the device PMOS transistor is represented by MP), and the devices MN1 and MN2 constitute the cascode amplifier stage of the circuit, and RL is the load of the amplifier , devices Rf and MN4 provide active feedback for the low noise amplifier to achieve input impedance matching, Vb1 provides bias for MN3, which can provide current for MN4, and MP1 functions as a shunt for the load resistor RL to reduce the voltage drop on it However, this structure is difficult to achieve high gain and wide bandwidth at the same time. The reason is that the shunt transistor MP1 needs to flow a relatively large current and requires a large device size, which makes the parasitic capacitance from the drain terminal to the ground very large.

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